IRFS4321-7PPBF

Series:	HEXFET®
Packaging:	Tube
Part Status:	Discontinued at Digi-Key
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150V
Current - Continuous Drain (Id) @ 25°C:	86A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	14.7 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4460pF @ 50V
FET Feature:	--
Power Dissipation (Max):	350W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK (7-Lead)
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)

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The IRFS4321-7PPBF is a high-voltage super-junction MOSFET made from Intersil\'s proprietary technology. Super-junction MOSFETs are a relatively new technology, and these components are among the next generation of transistors being used in various applications. The IRFS4321-7PPBF has several features that make it a great option for use in high-power applications, such as power converters and motor control. This article will discuss the application field of the IRFS4321-7PPBF and its working principle.The IRFS4321-7PPBF is a high-voltage MOSFET that is rated for drain-source voltages up to 500V and drain currents up to 14 A. The part is also rated for up to 175 degrees Celsius in continuous operation, making it ideal for applications that may be exposed to high temperatures or require a wide operating range. The transistor features a low gate charge, making it easier to drive and improving switching speeds. It also offers a very low on-state resistance, which reduces power losses and increases efficiency. The IRFS4321-7PPBF has a variety of different applications, including motor control, power conversion, and switching DC/DC converters. It is also well-suited for a range of applications requiring high-power operation such as automotive, industrial, and general-purpose devices. In addition to its power capabilities, the IRFS4321-7PPBF also offers great noise immunity and can be used in switching and digital logic applications. The working principle of the IRFS4321-7PPBF is based on the MOSFET technology that it is made from. The device features an insulated-gate field-effect transistor (IGFET) that relies on an electric field to control the current between the drain and source terminals. The gate terminal is used to control the behavior of the transistor by allowing or blocking the flow of current between the source and drain. A voltage applied to the gate controls the opening and closing of the transistor and thus the current flowing through it. The drain-source voltage is the voltage across the drain and source terminals, and the gate voltage is the voltage that is present at the gate terminal. In order for the transistor to be triggered, the voltage at the gate must be higher than a certain voltage threshold known as the threshold voltage. The IRFS4321-7PPBF is an excellent choice for applications that require a wide operating range, high-power capability, and low on-state resistance. Its low gate charge allows for faster switching speeds and improved efficiency, while its wide range of applications makes it suitable for a wide range of applications. By understanding the application fields and working principle of the IRFS4321-7PPBF, designers and engineers can better select the proper component for their specific applications.

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