Series:	BZG03C-M
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	11V
Tolerance:	±5.45%
Power - Max:	1.25W
Impedance (Max) (Zzt):	7 Ohms
Current - Reverse Leakage @ Vr:	4µA @ 8.2V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 500mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	DO-214AC (SMA)

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Diodes - Zener - Single

BZG03C11-M3-08 Application Field and Working Principle

Application Field

The BZG03C11-M3-08 is a Zener diode from TDK’s BI-LPSVP series, and is used in a variety of different electronic circuit applications. It has a breakdown voltage at 6.8 volts and a maximum power rating of 200 mW. It is commonly used as a regulator, in clamp circuits and in other reverse breakdown applications.In a regulated circuit arrangement, the BZG03C11-M3-08 is used as a voltage reference point with the breakdown voltage at 6.8 volts. The circuit is designed to prevent fluctuations in the output voltage by shielding itself from large voltage changes. Instead, the circuit will accept small fluctuations in the output voltage, such as those caused by small amounts of noise, while ensuring that the output voltage is always kept at a consistent level.In a clamp circuit arrangement, the BZG03C11-M3-08 is used as a protective clamp that serves to limit the voltage output of the circuit. In this type of circuit arrangement, the breakdown voltage at 6.8 volts acts as a limit to how high the voltage output can go, preventing the circuit from exceeding safe levels.The BZG03C11-M3-08’s reverse breakdown properties can be used in a variety of applications such as voltage clamping and in protection against electrical surges. For example, it can be used in power supplies, as a negative temperature coefficient detector, or even as a shunt regulator when combined with a resistor.

Working Principle

The BZG03C11-M3-08 is a Zener diode, a type of diode that operates by creating a reverse biased depletion region in the P-N junction. In this type of diode, the P side is connected to the anode while the N side is connected to the cathode. When a current flows through the diode, the electrons current flow from the N to the P side, creating an electric field that is known as the built-in potential barrier.When the reverse biased voltage is increased to a certain level known as the breakdown voltage, it causes the barrier to break down, allowing a heavy current to flow from the P side to the N side. This sudden burst of current causes a sharp increase in the voltage level at the breakdown voltage. This voltage level is referred to as the Zener voltage and is the basis of the reverse breakdown properties of the diode.In the case of the BZG03C11-M3-08, the Zener voltage is 6.8 volts. This means that when the reverse biased voltage reaches 6.8 volts, the barrier breaks down allowing the large current to pass through the diode and creating a voltage output of 6.8 volts. This reverse breakdown voltage remains constant and serves as a reference voltage in circuits that use the diode.

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