AON6400L_002 Allicdata Electronics
Allicdata Part #:

AON6400L_002-ND

Manufacturer Part#:

AON6400L_002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 85A 8DFN
More Detail: N-Channel 30V 31A (Ta), 85A (Tc) 2.3W (Ta), 83W (T...
DataSheet: AON6400L_002 datasheetAON6400L_002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 15V
FET Feature: --
Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads
Description

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The AON6400L_002 is a single N-channel 20V, 4.1A (Tc=25℃), enhancement mode Field Effect Transistor (FET) which is particularly well-suited for low voltage applications. This FET is designed utilizing an advanced dynamic dv/dt rating, making it suitable for high-speed switching applications in laptop computers, computer peripherals and digital communications devices as well as many other applications. It has a low On-resistance and a fast switching speed, enabling increased efficiency and switching speed.

The AON6400L_002 is a high-ratio FET which provides higher current density without sacrificing the basic functionality of a FET, such as low on-resistance, reverse drain current and source-drain breakdown voltage. It is a single-package FET that combines both an N-channel FET and a P-channel FET, thus allowing for an integrated performance of both nMOSFET and pMOSFET transistors. This FET can be used in various applications where high current density and low on-resistance are desired. It also offers advantages such as low power consumption, low noise, low inductance and fast switching times.

The AON6400L_002 has a maximum drain-source voltage of 20 V, a maximum drain current of 4.1 A at a drain-source voltage of 20 V, a maximum gate-source voltage of 20 V and a maximum gate-source leakage current of 1 μA. It also has a maximum junction temperature of 175°C (Tjmax) and a maximum drain-source breakdown voltage of 20 V. In addition, the FET has a fast switching time of 12 ns and a reverse transfer capacitance of 6 pF. Another feature of the AON6400L_002 is its increased efficiency in high-speed switching applications due to its low power consumption.

The working principle of the AON6400L_002 is based on the transfer of electrical charge between the drain and the source. This FET operates with a voltage drop across its drain-source terminal and utilizes a gate voltage to control the flow of charge between the drain and the source. When the gate voltage is applied, it controls the amount of current flowing through it, which results in an increase or decrease in the voltage drop at the drain-source terminal. The gate input is connected to a source of voltage (VGS) and its output is connected to the drain. When the gate receives a positive voltage, the FET is ON and a current flows from drain to the source. On the other hand, when the gate receives a negative voltage, the FET is OFF and a reverse current cannot flow from the source to the drain.

The AON6400L_002 is an excellent choice for a wide variety of applications including power management and switch-mode power supplies, DC/DC converters, low voltage power switches, load switches and level shifters, amongst others. It is a versatile FET that can provide improved performance and efficiency in many applications. Furthermore, its wide operating temperature range and low on-resistance make it suitable for use in high-speed switching applications and low voltage operations.

The specific data is subject to PDF, and the above content is for reference

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