Allicdata Part #: | MMBZ5262C-E3-08-ND |
Manufacturer Part#: |
MMBZ5262C-E3-08 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 51V 225MW SOT23-3 |
More Detail: | Zener Diode 51V 225mW ±2% Surface Mount SOT-23-3 |
DataSheet: | MMBZ5262C-E3-08 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.02024 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 51V |
Tolerance: | ±2% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 125 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 39V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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The MMBZ5262C-E3-08 is a single Zener type voltage regulator diode, which is primarily used for voltage regulation purposes. The device is typically used for applications such as power supply circuits and voltage stabilizers. The primary function of the diode is to maintain a relatively stable voltage output, even when exposed to varying input voltages or large current variations.
The MMBZ5262C-E3-08 has a wide operating voltage range, from 10V to 75V. It also has a very high surge current rating of 4A and an operating temperature range from -55°C to +125°C. The device features an additional breakdown voltage of 69V and a maximum clamping voltage of 122V. Additionally, the diode has a low reverse current of 0.1µA and an on resistance rating of 2.6Ω.
The diode is constructed using a highly doped, N-type semiconductor substrate, which is designed to improve the device\'s performance and reliability. The semiconductor substrate is then coated with a dielectric layer, usually aluminum nitride (AlN) or silicon dioxide (SiO2), which helps to insulate the substrate and protect the device from electrical damage. Finally, the substrate and coating are enveloped in a housing, which is typically made of ceramic or epoxy.
In order to ensure that the device operates correctly, a series of test and measuring procedures need to be carried out. For example, the two terminals of the diode should be measured for their electrical resistance. In addition, the current-voltage characteristics of the diode should be measured to determine the threshold voltage, the breakdown voltage, and the clamp voltage. Finally, the output voltage should be measured and compared to the desired level.
Once all of the necessary measurements and tests have been conducted, the diode can be used in various applications. For example, the device can be used in power supply circuits, with the output voltage being maintained at the desired level. Additionally, the device can also be used in stabilizing voltage. Here, the device is used to maintain a stable output voltage, even when the input voltage or the current demand changes suddenly.
In summary, the MMBZ5262C-E3-08 is a highly efficient voltage regulator diode, which has been designed to meet a wide range of challenging voltage regulation requirements. The device is constructed using a highly doped semiconductor substrate, which is then coated with a dielectric layer and sealed in a robust housing. With a wide range of operational parameters, such as a high surge current rating, a low reverse current, and an operating temperature range from -55°C to +125°C, the device can easily handle harsh environmental conditions. Furthermore, rigorous tests and measurements need to be conducted in order to ensure its optimal performance. The device can be used in various applications to maintain a stable output voltage.
The specific data is subject to PDF, and the above content is for reference
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