MMSZ5267B-E3-18

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The MMSZ5267B-E3-18 is a silicon planar power zener diode which is specifically designed to operate with high stability, low noise and sharp reverse break down characteristics. This diode is classified under the diodes-zeners-single category.

The main application of such diode is in voltage regulation while the main working principle is based on the flow of electric current.

In general, power zener diodes are used for voltage regulation. They are designed to be used in a circuit with a voltage regulator in order to control the voltage for a particular device. Zener diodes regulate the voltages beyond its intended operating range, allowing for a wide range of output voltages. Moreover, Zener diodes can also be used for voltage switching. They are used as switches to turn on and off a device at predetermined voltages.

The MMSZ5267B-E3-18 diode is an example of such type of zener diode. It is rated at 18 volts and features a reverse breakdown voltage of 2.0V to 6.1V, with an average power rating at 2.0 watt. This makes it ideal for a wide range of voltage control applications. It also features a low device capacitance, which helps make it suitable for applications such as power supply noise filters, transient voltage suppression, frequency tuning, pulse shaping and switching.

The working principle of the MMSZ5267B-E3-18 diode is to limit current in a circuit by preventing the voltage from rising above a certain level. It is composed of a junction of n-type and p-type materials, thus forming an n-p junction. This junction is responsible for the voltage regulation and current flow capability of the diode.

When a DC voltage is applied in the forward direction or anode to cathode, the flow of current is allowed in the forward direction only. When the voltage rises above the Zener breakdown voltage, then current will also be allowed to flow in the reverse direction. This results in a stabilized voltage across the diode as the current flows in both directions.

These power zener diodes also feature reverse leakage current, which is inversely proportional to their breakdown voltage. In other words, the lower the Zener breakdown voltage, the higher the reverse leakage current. This property allows it to be used for voltage regulation with a wide range of input voltages.

In conclusion, the MMSZ5267B-E3-18 diode is an example of a power zener diode which is designed for voltage regulation, switching and general circuit protection applications. It is classified under the Diodes - Zener - Single category, and features a reverse breakdown voltage of 2.0V to 6.1V, with an average power rating at 2.0 watt. This diode operates with a working principle of controlling the current flow and voltage regulation through a n-p junction.

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