Allicdata Part #: | BZT55B9V1-GS08-ND |
Manufacturer Part#: |
BZT55B9V1-GS08 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 9.1V 500MW SOD80 |
More Detail: | Zener Diode 9.1V 500mW ±2% Surface Mount SOD-80 Qu... |
DataSheet: | BZT55B9V1-GS08 Datasheet/PDF |
Quantity: | 1000 |
12500 +: | $ 0.02249 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 9.1V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 6.8V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-80 Variant |
Supplier Device Package: | SOD-80 QuadroMELF |
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Diodes - Zener - Single
The BZT55B9V1-GS08 belongs to diodes - zener - single type which are commonly regarded as the most basic diodes. Diodes are commonly used in electronic circuits as a means of regulating electric current or signal flow. In its basic form, a diode consists of two electrodes or terminals placed inside a semiconductor material, allowing current to travel in one direction, while inhibiting its flow in the opposite direction. Zener diodes are special types of diodes that are designed to operate in the reverse breakdown region, allowing current to travel in both directions while maintaining a specific voltage.
The BZT55B9V1-GS08 is a 9V zener diode with both high power handling capabilities and low leakage current. It is rated for its peak pulse power of 300W for 10µs pulse with a maximum reverse voltage of 9V. It is also equipped with a unique guard-ring die construction with small guard-ring areas which improves the high temperature performance characteristics. Also, this diode has low breakdown voltage, low maximum clamping voltage, and low-noise radiation for optimal performance.
Application Field
The BZT55B9V1-GS08 has a wide variety of applications. It can be used to provide constant voltage power supply solutions, package repairs, and other current and voltage regulating tasks, such as: surge protection, power rectification, electronic noise filtering, and transient voltage suppression.
This diode can also be used in AC-DC, DC-DC, and DC-AC power supplies as a clamp element. It can also be utilized in low-power circuits, automotive applications like consumption metering or lighting, and telecom circuits like modulators and radio frequency linear amplifiers.
Working Principle
The working principle of the BZT55B9V1-GS08 is based on the physical effect called Zener breakdown, which occurs when a voltage higher than the breakdown voltage is applied across the diode. When this happens, the diode will start to conduct current in the reverse direction. This is possible because the electric field of the applied reverse voltage breaks down the junction of the diode, creating an area of low resistance where the electrons can travel, hence allowing current to pass through the diode.
The Zener breakdown voltage of the BZT55B9V1-GS08 is 9V, meaning that the applied reverse voltage must be greater than 9V in order to pass current through the diode. Additionally, the device is designed to operate in the reverse bias mode, meaning that the current flows from the anode to the cathode, not vice versa. Once the voltage reaches the breakdown voltage, a small current will flow through the diode and cause it to provide a steady voltage across the loads.
In conclusion, the BZT55B9V1-GS08 is a versatile 9V zener diode which has the ability to provide consistent and reliable voltage regulation in a wide range of electronic circuits. It is designed to operate in the reverse breakdown region and have high power handling capabilities, as well as low leakage current values. Its applications range from low-power circuits to heavy surge protection, and in many automotive and telecom applications as a clamp element. It operates on the principle of Zener breakdown, requiring a higher reverse voltage in order to conduct current through the diode.
The specific data is subject to PDF, and the above content is for reference
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