SMZG3798B-E3/5B

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SMZG3798B-E3/5B is a type of single Zener diode. It is suitable for repetitive and reverse-blocking voltage applications and has the advantage of having a wide operating temperature range, taking it from -65°C to +175°C. Moreover, its VZ is accurate to 5mV and its Z-level is marked on the diode itself. The diode is able to hold a reverse operation current of up to 40mA at a power dissipation of up to 200mW.

The most common application of SMZG3798B-E3/5B is in voltage regulation and clamping activities. In voltage regulation, Zener diodes provide absolute value of voltage to keep it steady in a circuit. It is largely used by circuity to reduce voltage at specific point, in order to limit and stabilise them. In clamping, Zener diodes serves as a buffer between two successive resistors. It creates a concise mechanism for circuitry to redirect dangerous energy in a safe direction, thus preventing the circuit from overheating and other damage.

It is important to recognise the working principle of SMZG3798B-E3/5B in order to make effective use of it. Before taking a closer look at how it works, it is essential to understand two fundamental concepts. The first is Zener breakdown. Zener breakdown occurs when the reverse voltage applied to the Zener diode exceeds a certain threshold. This means that the valence band of the semiconductor material becomes partially filled with electrons, creating a region of high mobility called a depletion region. The second concept is the avalanche effect. This effect occurs when the electric field generated by the reverse voltage becomes too intense, causing the electrons on its outer edge to be attracted back across the depletion region and onto the other side, resulting in an avalanche of current.

The basic operating principle of SMZG3798B-E3/5B is based on the avalanche effect. When a reverse voltage is applied to the diode, a high electric field will form. This electric field acts to push the electrons towards the middle of the depletion region, but its strength has to exceed the band-gap of the semiconductor material in order for the Zener breakdown to happen. When the electric field does exceed the band-gap, the electrons will be pushed across and the depletion region will be filled with electrons, causing a Zener breakdown. As the electric field increases, the reverse current in the diode will increase as well, resulting in a constant voltage.

In summary, SMZG3798B-E3/5B is a single Zener diode which can be used in a variety of applications, such as voltage regulation and clamping. Its wide operating temperature range and accurate VZ rating make it an attractive option for many applications. Additionally, its working principle is based on the avalanche effect, with its operation being governed by the electric field and band-gap of the material it is made of. All these factors make SMZG3798B-E3/5B an ideal choice for many applications requiring a durable and reliable Zener diode.

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