Allicdata Part #: | 1N5371E3/TR13-ND |
Manufacturer Part#: |
1N5371E3/TR13 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 60V 5W T18 |
More Detail: | Zener Diode 60V 5W ±20% Through Hole T-18 |
DataSheet: | 1N5371E3/TR13 Datasheet/PDF |
Quantity: | 1000 |
1250 +: | $ 0.49877 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 60V |
Tolerance: | ±20% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 43V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5371 |
Description
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Overview of 1N5371E3/TR131N5371E3/TR13 is a single Zener diode that is commonly used for various applications such as voltage regulation, protection and level shifting. The diode has a compact packaging, and its small size makes it suitable for designs in which space is at a premium. It also offers excellent thermal performance and high-frequency operation.Application Field1N5371E3/TR13 is typically used in the fields of consumer electronics, automotive and industrial applications. It can be used to reverse voltage protection and to regulate voltage in battery-powered devices. The diode is also suitable for steady-state voltage regulation, with a maximum zener voltage of 3.3V and a zener current of 1.2mA.In consumer electronic devices, 1N5371E3/TR13 is often used to protect circuits against electrostatic discharge (ESD). The diode can handle up to 5kV ESD strikes, providing a robust protection safeguard. The diode is also frequently utilized in the automotive industry, where it is used to level-shift low voltage and high current signals.Working Principle
1N5371E3/TR13 operates by virtue of the Zener effect. This occurs in a P-N junction when the electric field intensity in the junction is altered so that an electric current is allowed to flow when a voltage is applied across it. This electric field can be manipulated by changing the doping concentration in the N-type semiconductor material.In 1N5371E3/TR13, the zener voltage is controlled by the doping concentration. An increase in the doping concentration increases the zener voltage, while a decrease in the doping concentration decreases the zener voltage. The diode is designed to have a specific zener voltage, which is determined by the doping concentration.In addition to its zener voltage, 1N5371E3/TR13 also has a breakdown voltage and a leakage current. The breakdown voltage is the voltage at which the zener effect can no longer hold back the open-circuit current from the P-N junction, while the leakage current is the current that flows through the diode when the external voltage is at zero.When a voltage is applied to 1N5371E3/TR13, the electric field intensity in the P-N junction is increased, which causes the current to increase until the breakdown voltage is reached. At this point, the current increases rapidly and the device is said to be in a “Zener breakdown” mode, which is the condition in which it can regulate voltage.Conclusion
1N5371E3/TR13 is a single Zener diode that is widely used in consumer electronic devices, automotive and industrial applications. It is suitable for voltage regulation, reverse voltage protection and level shifting, with a zener voltage of 3.3V and a zener current of 1.2mA. The working principle of the diode is based on the Zener effect, which occurs when the electric field intensity in the P-N junction is altered so that an electric current is allowed to flow when a voltage is applied across it.
The specific data is subject to PDF, and the above content is for reference
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