1N5371E3/TR13 Allicdata Electronics
Allicdata Part #:

1N5371E3/TR13-ND

Manufacturer Part#:

1N5371E3/TR13

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 60V 5W T18
More Detail: Zener Diode 60V 5W ±20% Through Hole T-18
DataSheet: 1N5371E3/TR13 datasheet1N5371E3/TR13 Datasheet/PDF
Quantity: 1000
1250 +: $ 0.49877
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 60V
Tolerance: ±20%
Power - Max: 5W
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 43V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18
Base Part Number: 1N5371
Description

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Overview of 1N5371E3/TR131N5371E3/TR13 is a single Zener diode that is commonly used for various applications such as voltage regulation, protection and level shifting. The diode has a compact packaging, and its small size makes it suitable for designs in which space is at a premium. It also offers excellent thermal performance and high-frequency operation.Application Field
1N5371E3/TR13 is typically used in the fields of consumer electronics, automotive and industrial applications. It can be used to reverse voltage protection and to regulate voltage in battery-powered devices. The diode is also suitable for steady-state voltage regulation, with a maximum zener voltage of 3.3V and a zener current of 1.2mA.In consumer electronic devices, 1N5371E3/TR13 is often used to protect circuits against electrostatic discharge (ESD). The diode can handle up to 5kV ESD strikes, providing a robust protection safeguard. The diode is also frequently utilized in the automotive industry, where it is used to level-shift low voltage and high current signals.Working Principle
1N5371E3/TR13 operates by virtue of the Zener effect. This occurs in a P-N junction when the electric field intensity in the junction is altered so that an electric current is allowed to flow when a voltage is applied across it. This electric field can be manipulated by changing the doping concentration in the N-type semiconductor material.In 1N5371E3/TR13, the zener voltage is controlled by the doping concentration. An increase in the doping concentration increases the zener voltage, while a decrease in the doping concentration decreases the zener voltage. The diode is designed to have a specific zener voltage, which is determined by the doping concentration.In addition to its zener voltage, 1N5371E3/TR13 also has a breakdown voltage and a leakage current. The breakdown voltage is the voltage at which the zener effect can no longer hold back the open-circuit current from the P-N junction, while the leakage current is the current that flows through the diode when the external voltage is at zero.When a voltage is applied to 1N5371E3/TR13, the electric field intensity in the P-N junction is increased, which causes the current to increase until the breakdown voltage is reached. At this point, the current increases rapidly and the device is said to be in a “Zener breakdown” mode, which is the condition in which it can regulate voltage.Conclusion
1N5371E3/TR13 is a single Zener diode that is widely used in consumer electronic devices, automotive and industrial applications. It is suitable for voltage regulation, reverse voltage protection and level shifting, with a zener voltage of 3.3V and a zener current of 1.2mA. The working principle of the diode is based on the Zener effect, which occurs when the electric field intensity in the P-N junction is altered so that an electric current is allowed to flow when a voltage is applied across it.

The specific data is subject to PDF, and the above content is for reference

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