Allicdata Part #: | 1N5344AE3/TR8-ND |
Manufacturer Part#: |
1N5344AE3/TR8 |
Price: | $ 1.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 8.2V 5W T18 |
More Detail: | Zener Diode 8.2V 5W ±10% Through Hole T-18 |
DataSheet: | 1N5344AE3/TR8 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.28728 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 8.2V |
Tolerance: | ±10% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 1.5 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 5.9V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5344 |
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A diode is a semiconductor device consisting of two regions of opposite conductivity, which is used to control the flow of electricity in a circuit. One type of diode is a Zener, which is often used to regulate voltage in circuits. A single Zener diode such as the 1N5344AE3/TR8 has a wide range of applications and works in a unique way.
1N5344AE3/TR8 Application Field
The 1N5344AE3/TR8 is a 3.8V Zener diode with a power dissipation of 500mW, making it ideal for a wide range of applications. Its power dissipation rating is low, making it suitable for use in circuits with limited power. Its fast switching characteristics make it ideal for use in noise suppression circuits, such as those used to reduce interference in radio-frequency equipment.
The 1N5344AE3/TR8 can also be used in low-voltage level detection circuits. In such circuits, the diode can be used as a voltage reference point, detecting when the voltage level reaches a predetermined point. Additionally, the diode is often used in the protection circuit for batteries. It can be used to detect and prevent accidental overcharging or over-discharging.
1N5344AE3/TR8 Working Principle
The 1N5344AE3/TR8 operates using a unique mechanism known as the Zener Breakdown effect. This is a property of diodes whereby the reverse bias voltage causes a breakdown of the diode’s PN junction. When this happens, the diode begins to act as a resistor, allowing a small current to flow through the diode.
The 1N5344AE3/TR8 has an avalanche breakdown voltage of 3.8V, meaning that any voltage applied to the diode that exceeds 3.8V will cause a breakdown of the PN junction. When the diode is connected to a power supply and the voltage reaches 3.8V, it will begin to resist the flow of current. This creates a controlled voltage that is maintained at 3.8V, regardless of fluctuations in the power supply.
Conclusion
The 1N5344AE3/TR8 is a versatile single Zener diode with a wide range of applications. Its low power consumption and fast switching characteristics make it ideal for use in noise suppression and low-voltage level detection circuits. Additionally, its Zener Breakdown effect enables it to create a controlled voltage of 3.8V, regardless of fluctuations in the power supply.
The specific data is subject to PDF, and the above content is for reference
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