Allicdata Part #: | 1N5347BE3/TR12-ND |
Manufacturer Part#: |
1N5347BE3/TR12 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 10V 5W T18 |
More Detail: | Zener Diode 10V 5W ±5% Through Hole T-18 |
DataSheet: | 1N5347BE3/TR12 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 2 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 7.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5347 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are electrical components that allow current to flow in one direction only. Zener diodes are similar to a traditional diode, but with an added feature. They allow current to flow in either direction during normal operation, but also have a reverse breakdown voltage. This is a voltage level higher than the voltage applied to the diode, which will not cause it to break down, but which will keep it in a stable condition. The 1N5347BE3/TR12 is a Zener diode that is used in a variety of applications.
The 1N5347BE3/TR12 is a single Zener diode with a reverse breakdown voltage of 12 V and a power rating of 500 mW. It is a popular choice for applications where pulse suppression and low-noise circuits are required. Its reverse breakdown voltage of 12 V allows it to be used for applications that require high-power handling capabilities, such as constant current sources, voltage switching applications, and voltage references.
The 1N5347BE3/TR12 diode is constructed of an N-type semiconductor material, which consists of P-type and N-type materials connected together. The P-type material is lightly doped with a donor impurity, while the N-type material is heavily doped with an acceptor impurity. The P-type material acts as the diode\'s anode and the N-type material acts as the cathode. The two materials are connected by a junction, and current flows when this junction is forward biased.
The working principle of the 1N5347BE3/TR12 Zener diode is based on the operation of a PN junction. When a voltage is applied to the diode, it passes through the junction and creates a current. This current flows in one direction only. During normal operation, the direction of current flow is in the reverse direction of the applied voltage. When the applied voltage exceeds the reverse breakdown voltage of the diode, the diode breaks down and the current begins to flow in the forward direction.
The 1N5347BE3/TR12 is an ideal choice for applications that require high power handling capabilities and high voltage capabilities. It is also used in high-accuracy systems, such as precision monitoring and testing, due to its low leakage current. It is also used in constant current sources and voltage switching applications.
The 1N5347BE3/TR12 Zener diode is an ideal choice for applications where pulse suppression and low-noise circuits are required. Due to its reverse breakdown voltage of 12 V and its high power rating of 500 mW, it is well suited for a variety of applications. It is also an ideal choice for precision monitoring and testing applications.
The specific data is subject to PDF, and the above content is for reference
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