TRS12E65C,S1Q Allicdata Electronics
Allicdata Part #:

TRS12E65CS1Q-ND

Manufacturer Part#:

TRS12E65C,S1Q

Price: $ 9.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: DIODE SCHOTTKY 650V 12A TO220-2L
More Detail: Diode Silicon Carbide Schottky 650V 12A (DC) Throu...
DataSheet: TRS12E65C,S1Q datasheetTRS12E65C,S1Q Datasheet/PDF
Quantity: 38
1 +: $ 8.10180
Stock 38Can Ship Immediately
$ 9
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 90µA @ 170V
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Description

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TheTRS12E65C,S1Q is a single rectifier diode from a long and diverse range of diodes available in the market. It is also known as a Schottky (SMD) diode. A conductor can be heated to emit electrons, thereby creating a current through the conductor. In this way, the diode works like a one-way valve of sorts, allowing electrons to flow only in one direction. A key feature of this diode is the ability to work at high-temperatures, both in storage and in operation, making it ideal for applications in the aviation and automotive industries.

The TRF12E65C,S1Q is available in several sizes, with a power dissipation as high as 65W, allowing a wide range of applications. With a reverse-recovery time of 150ns, it is suitable for use in high-speed switching applications and high-frequency switching applications, such as switching power supplies or PWM circuits. Furthermore, its low forward voltage drop allows for efficient power conversion.

The diode is made using a semiconductor junction, typically a silicon-dioxide layer between a positive and negative silicon plate. The construction of this junction ensures a very low voltage drop and fast switching speeds, without generating excess heat. The power dissipation of this diode is ensured by its large thermal resistance junction, which helps prevent overheating.

This diode requires an effective heat sink to ensure its best performance. When looking for a suitable heatsink for the TRF12E65C,S1Q, it is important to look for one with a minimum thermal resistance of 0.2 degrees C per watt. This figure is calculated by measuring and comparing the increase in temperature of the diode when subject to a given amount of power. It is also important to consider the ambient temperature; the higher the ambient temperature, the lower the power dissipation.

In addition to its fast switching speeds, the TRF12E65C,S1Q has a strong surge-current limiter, providing a sense of security and peace of mind when using it in applications such as motor drives, which need to run at high speed and also perform well under load. Furthermore, this diode is resistant to voltage transients, making it a valuable addition to any system dealing with sensitive components.

The TRF12E65C,S1Q is an excellent choice for any application that requires high-speed switching and great protection against voltage transients. Its low forward voltage drop and high temperature resistance make it ideal for use in the automotive and aviation industries, as well as in switching power supplies and PWM circuits. Its surge-current limiter ensures reliable performance, while its heatsink ensures efficient power conversion. All these features make the TRF12E65C,S1Q a highly reliable and versatile diode.

The specific data is subject to PDF, and the above content is for reference

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