Allicdata Part #: | BAS19-HE3-18-ND |
Manufacturer Part#: |
BAS19-HE3-18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 200MA SOT23 |
More Detail: | Diode Standard 100V 200mA Surface Mount SOT-23 |
DataSheet: | BAS19-HE3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01889 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 100V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The BAS19-HE3-18 diode is a surface-mount single diodes designed for applications such as mobile phones, computer peripherals, and automotive electronics. It has a reverse voltage of 18V and can handle up to a maximum forward current of 200mA. It is also a low-power device and is offered in the ceramic SOD-323 SMD package.
The main feature of the BAS19-HE3-18 diodes is their low reverse leakage current. This means that current will only pass through the device when a high reverse voltage is applied and will remain blocked when the voltage is below the threshold. This helps minimize power dissipation, making these diodes an ideal choice for applications with energy constraints.
The operation of the BAS19-HE3-18 diode is based on the PN or diode junction principle. When the anode of the diode is connected to the higher voltage, the P-type material will be attracted to the N-type material, allowing current to flow across the junctions. This produces an electric field which induces a current, known as the forward current, to pass through the device.
Conversely, when the cathode of the device is connected to a higher voltage, the N-type material will be attracted to the P-type material and no current can pass through the diode. This prevents current flow in the device and the voltage on the cathode is known as the reverse voltage. This process is known as reverse-bias.
The BAS19-HE3-18 diode is designed with low forward and reverse voltage losses, making them more efficient devices. This means that they can transfer more power with less energy and require less energy to produce a given amount of power. This makes them ideal for applications such as rectifiers, as they can convert AC voltage to DC voltage in a much more efficient manner.
The BAS19-HE3-18 diode is also great for use in data transmission and communication equipment. Due to its low-leakage and reverse voltage characteristics, it can help protect the equipment from high voltage spikes and surges, preventing damage to sensitive circuits. It is also a great choice for use in solar energy systems, as it can help to reduce losses due to its efficient performance.
The BAS19-HE3-18 diode can be used in a variety of applications and is an excellent choice for those looking for a reliable and efficient device. Its low leakage current and reverse voltage characteristics make it a great choice for use in mobile devices, computer peripherals, automotive electronics, data transmission, communications, and solar energy systems.
The specific data is subject to PDF, and the above content is for reference
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