Allicdata Part #: | PR1004-T-ND |
Manufacturer Part#: |
PR1004-T |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 400V 1A DO41 |
More Detail: | Diode Standard 400V 1A Through Hole DO-41 |
DataSheet: | PR1004-T Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.02495 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | PR1004 |
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The PR1004-T is a single rectifier diode belonging to the PR1004 family of high power devices. It has an operating temperature range of -55°C to +150°C, voltage range from -200V to +200V, with peak reverse working voltage of 1000V, and a maximum junction temperature of 150°C. This device has been designed for use in industrial, military and consumer applications.
The PR1004-T is a passivated-isolated junction rectifier device. It is a three-layer structure, where each layer consists of a heavily boron-doped P-type layer and an N+type layer. The middle layer consists of a field-oxide layer between the two P layers, which prevents any contact between the P and N layers. The outer two layers each consist of heavily boron-doped P+ and N+ layers, which are connected to the N+ and P+ layers, respectively.
The working principle of the PR1004-T is based on the principle of rectification. In a standard rectification process, an AC voltage is applied at the input of the diode, and this AC voltage is then rectifiedto a DC voltage at the output. This is achieved by using a junction diode, which is constructed using the three-layer structure mentioned above.
When an AC signal is applied at the input of the PR1004-T, the voltage and current will alternate between positive and negative values. During the positive cycles of the signal, the N+ layer of the diode will become positively charged and the P+ layer will become negatively charged. This results in a forward bias between the junction, which causes free carriers (electrons and holes) to be drawn across the junction and flow through the device. During the negative cycles of the signal, the charge of the layers will be reversed, resulting in a reverse bias, which causes the P+ and N+ layers of the diode to become more conductive, and thus blocking any current flow.
The PR1004-T is used in a variety of applications, ranging from high power supplies to low power logic circuits. In high power supplies, the PR1004-T can be used to rectify an AC signal to a DC signal, which can then be used to provide a stable voltage and current to power circuits. In low power logic circuits, the PR1004-T is used as a fast switch, which is capable of rapidly switching low-voltage signals to either open or closed circuit states. In both cases, the PR1004-T can be used to improve overall system performance.
The PR1004-T is also widely used in energy storage. It is capable of converting AC to DC, allowing it to be used as part of an integrated charging circuit for batteries, or it can also be used as part of a power converter to convert AC to DC for use in other applications.
Overall, the PR1004-T is an important device for many types of applications. Its high power capabilities, low on-state voltage drop, and high surge capability make it well-suited for use in a variety of applications. Its ability to quickly switch between open and closed states makes it very useful for low power logic circuits, and its ability to rectify AC to DC allows it to be used with energy storage systems. By using the PR1004-T, system operators can improve their overall system performance and energy efficiency.
The specific data is subject to PDF, and the above content is for reference
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