SF27GHB0G Allicdata Electronics
Allicdata Part #:

SF27GHB0G-ND

Manufacturer Part#:

SF27GHB0G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 500V 2A DO204AC
More Detail: Diode Standard 500V 2A Through Hole DO-204AC (DO-1...
DataSheet: SF27GHB0G datasheetSF27GHB0G Datasheet/PDF
Quantity: 1000
7000 +: $ 0.04525
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 500V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes, rectifiers, and single applications are among the most versatile and widely used components of today’s electronic circuits. With their ability to control the flow of electrical current, they are fundamental in the development of many electronic systems. The use of diodes, rectifiers and single devices can range from simple electronic circuits to complex miniaturized system solutions. Today’s technology utilises the advantages of these devices in a variety of applications, and the SF27GHB0G single device is no exception.

The SF27GHB0G is an ultra-fast rectifier developed by TOSHIBA Semiconductor and designed for use in high-frequency switching power supplies. It can handle load current up to 1A and is capable of fast reverse recovery with a short reverse recovery time of 35ns. Additionally, the unit offers quite low forward voltage drop making it ideal for use in high-speed, low power applications. It features a maximum reverse recovery time of 200ns, an impressive low operating temperature of -55°C and a maximum operating temperature of +150°C.

The SF27GHB0G’s principle of operation is quite straightforward. Essentially, the device is constructed of a pair of rectifying diodes connected in inverse parallel, along with a zener diode connected in reverse parallel. The zener diode is connected in such a way as to ensure that when the voltage across it exceeds a certain threshold, it begins to conduct in reverse. This feature is known as avalanche breakdown, and the SF27GHB0G’s diode configuration allows for a highly efficient backward recovery when subjected to over-voltage conditions.

The SF27GHB0G can be used in a variety of applications, from the most basic circuit design to the most complex and sophisticated electronic systems. In high-frequency switching power supplies, for instance, the device’s ability to continuously control the direction and magnitude of current can make it invaluable. Its ability to deliver an ultra-fast response time and withstand high voltages and currents makes it suitable for demanding applications such as computer systems, automotive, telecom and aerospace applications.

In addition to its high-performance capabilities, the SF27GHB0G is also cost-effective and easy to install. Its rugged construction and low power consumption make it ideal for tight-space applications and extreme environmental applications. Furthermore, its max operating temperature allows for extended service life, making it an ideal choice for use in both commercial and military applications.

The SF27GHB0G single device is a versatile, high-performance, cost-effective solution for a variety of applications. Its fast and efficient recovery time, low forward voltage drop, extended service life and rugged construction make it a valuable tool for both simple and complex projects. Employing the SF27GHB0G within an electronic system can provide precise control of current and voltage, allowing for smooth, reliable operation.

The specific data is subject to PDF, and the above content is for reference

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