Allicdata Part #: | 1N4248GP-E3/54-ND |
Manufacturer Part#: |
1N4248GP-E3/54 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 1A DO204AL |
More Detail: | Diode Standard 800V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | 1N4248GP-E3/54 Datasheet/PDF |
Quantity: | 1000 |
11000 +: | $ 0.04614 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1µA @ 800V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 160°C |
Base Part Number: | 1N4248 |
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A diode is a two-terminal electronic component with an asymmetric conductivity, which means it allows current to flow in one direction but not the other. A single diode is the simplest and most common type of diodes, made up of just two terminals, a cathode and an anode. The 1N4248GP-E3/54 is a single, fast recovery and high-power rectifier diode. This type of diode is designed to rectify and manage power in a number of different applications.
Working Principle of 1N4248GP-E3/54
The 1N4248GP-E3/54 is a fast-recovery rectifier that uses a crystalline silicon substrate, which helps the diode to recoup its voltage quickly. When direct current (DC) is applied to the anode and cathode, current begins to flow in one direction, creating a one-way path for the current. This is made possible by the diode\'s negative–positive–negative (NPN) design and the fast-recovery properties.
The diode\'s fast recovery time means that it will dissipate its stored charge quickly, allowing the diode to be switched off faster than other diodes. This means that the 1N4248GP-E3/54 can handle a high-power load for a short period of time, making it ideal for applications where a high-power, brief pulse of voltage is needed, such as switching converter circuits.
Application Field
The 1N4248GP-E3/54 is particularly suitable for a variety of high-frequency switching applications, as it can have a smaller size and weight than conventional diodes. It is usually used in high-power switching applications, such as switching converter circuits, where fast-recovery time is needed.
In addition, the diode can also be used in automotive, audio amplifiers, and photovoltaic (solar) applications as a rectifier. It can also be used in high-frequency applications, such as high-frequency filters, fuses, and snubbers.
The 1N4248GP-E3/54 is a single, fast recovery and high-power rectifier diode. It is well suited for a number of applications, including high-power switching applications, automotive, audio amplifiers and photovoltaic (solar) applications, as well as high-frequency filters, fuses, and snubbers. It is made with a crystalline silicon substrate, which helps it to regain its voltage quickly. As such, it is suitable for high-frequency operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4246GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4248GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4249GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4247GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4246GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4248GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4249GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4245 | Microsemi Co... | 2.58 $ | 1000 | DIODE GEN PURP 200V 1A AX... |
1N4246 | Microsemi Co... | 2.72 $ | 1000 | DIODE GEN PURP 400V 1A AX... |
1N4247 | Microsemi Co... | -- | 3765 | DIODE GEN PURP 600V 1A AX... |
1N4254 | Microsemi Co... | 4.17 $ | 1000 | RECTIFIER DIODEDiode |
1N4248 | Semtech Corp... | 4.68 $ | 1000 | DIODE GEN PURP 800V 1A AX... |
1N4249 | Semtech Corp... | -- | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N4255 | Microsemi Co... | 7.43 $ | 1000 | RECTIFIER DIODEDiode |
1N4256 | Microsemi Co... | 7.43 $ | 1000 | RECTIFIER DIODEDiode |
1N4257 | Microsemi Co... | 7.43 $ | 1000 | RECTIFIER DIODEDiode |
1N4246GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4248GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4249GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4246GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4248GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4249GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4246GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4249GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4246GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4249GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4245GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N4248GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N4245GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N4248GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
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