1N4249GP-E3/54 Allicdata Electronics
Allicdata Part #:

1N4249GP-E3/54GITR-ND

Manufacturer Part#:

1N4249GP-E3/54

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1KV 1A DO204AL
More Detail: Diode Standard 1000V 1A Through Hole DO-204AL (DO-...
DataSheet: 1N4249GP-E3/54 datasheet1N4249GP-E3/54 Datasheet/PDF
Quantity: 1000
5500 +: $ 0.05061
11000 +: $ 0.04614
27500 +: $ 0.04316
55000 +: $ 0.03969
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C
Base Part Number: 1N4249
Description

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Diodes are an important component in an electrical circuit, and function as an electrical switch that only passes current in one direction. The 1N4249GP-E3/54 is a type of single rectifier diode, which is designed to allow AC line current to pass through circuit elements such as capacitors, resistors, and/or other components, while blocking the flow of electricity in the reverse direction. This diode is ideally suited for applications where high-speed switching is required and for certain jobs where a voltage regulator must be quickly and conveniently shut off.

The 1N4249GP-E3/54 diode can be used in a wide variety of applications including consumer electronics, automotive, and industrial. Its reverse voltage range is 400V and the forward current is rated at 54A. Its maximum blocking voltage is 700V and its power dissipation is at least 2.25W. It is also capable of handling an operating temperature range of -40C to +150C.

The construction of a 1N4249GP-E3/54 diode largely depends on its purpose. They are generally composed of a silicon substrate and an oxide layer. The oxide layer acts as an insulator, protecting the substrate from the external environment, while the silicon substrate acts as a semiconductor, allowing the diode to conduct current in one direction and block it in the other. Additionally, the diode can be coated with a heat-resistant material such as gold, allowing it to better handle heat and electrical current.

The 1N4249GP-E3/54 diode’s working principle is based on the PN junction, whose technical name stands for Positive-Negative. A PN junction is formed when a silicon-doped piece of material is placed alongside an N-type doped slice of material. This creates an area in the gap between them where the atoms of the two pieces overlap, forming an accurate junction that acts as an electrical resistor when current tries to pass through it. When a voltage is applied to the diode, the current will flow through it in one direction, while blocking any current that attempts to pass in the reverse direction.

The 1N4249GP-E3/54 diode also uses reverse-biased protection, which is a mechanism designed to protect the component from short-circuit damage. If an excessive amount of voltage is applied to the diode, the reverse bias protection will kick in and the diode will automatically switch off, thus preventing the component from being damaged by these large electrical currents.

In conclusion, the 1N4249GP-E3/54 diode is a type of single rectifier diode specifically designed for applications requiring high-speed switching. It is capable of handling reverse voltage of up to 700V, as well as an operating temperature range of -40C to +150C. The component combines the PN junction and reverse-biased protection technologies to be both reliable and safe to use.

The specific data is subject to PDF, and the above content is for reference

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