Allicdata Part #: | VS-8EWH06FNTRL-M3-ND |
Manufacturer Part#: |
VS-8EWH06FNTRL-M3 |
Price: | $ 0.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 8A D-PAK |
More Detail: | Diode Standard 600V 8A Surface Mount D-PAK (TO-252... |
DataSheet: | VS-8EWH06FNTRL-M3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.27959 |
Series: | FRED Pt® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 2.4V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 50µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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VS-8EWH06FNTRL-M3 application field and working principle
The VS-8EWH06FNTRL-M3, categorized with the semiconductor family of diodes and rectifiers, is a single component device. It is a Schottky diode with a low total capacitance and a maximum VRRM of 600V.
The component is designed for use in high frequency switching applications. It has been optimized for high speed switching, with its low capacitance and a fast reverse recovery time. It is appropriate for use in high frequency switching of PFC stages, SMPS, LED drivers, and DC-DC converters, among other applications.
The diode is housed in a standard SMB package suitable for automatic mounting. It has two leads with an attractive white epoxy finishing. The package is designed for maximum heat dissipation, which is essential for reliability and for extended life of the component. It also features a surge current capability of 50A.
Working Principle
The VS-8EWH06FNTRL-M3 is based on Schottky barrier technology. This type of device offers superior performance over the typical PN junction devices common in general purpose diodes. They have a much lower voltage drop than PN junction diodes and this offers higher efficiency in applications where a diode needs to conduct current. The lower voltage drop also helps reduce radio frequency interference.
When current is passed through the device, electrons in the conduction band of the semiconductor is moved across the Schottky barrier. This provides a low forward voltage and a short reverse recovery time. In order to maintain the low forward voltage, the number of parameters used to calculate the breakdown voltage needs to be adjusted. These parameters depend on the identity of the active material, area of the device, and temperature.
The device also exhibits low reverse leakage current. This leakage is due to trapped charges in the barrier layer. The leakage characteristics are affected by temperature and angle of the contact plane. The smaller the contact plane angle, the larger the forward current and lower the reverse current.
Conclusion
The VS-8EWH06FNTRL-M3 is an excellent choice for high frequency switching applications. The low total capacitance and fast reverse recovery time make it suitable for such applications. It also has a surge current rating of 50A, which allows for higher reliability in most operating conditions. The combination of its superior performance parameters along with its attractive package make it a great choice for any application that requires a reliable single diode.
The specific data is subject to PDF, and the above content is for reference
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