VS-8EWH06FNTR-M3 Discrete Semiconductor Products |
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Allicdata Part #: | VS-8EWH06FNTR-M3TR-ND |
Manufacturer Part#: |
VS-8EWH06FNTR-M3 |
Price: | $ 0.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 8A DPAK |
More Detail: | Diode Standard 600V 8A Surface Mount D-PAK (TO-252... |
DataSheet: | VS-8EWH06FNTR-M3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.27959 |
Series: | FRED Pt® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 2.4V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 50µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 8EWH06 |
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Diodes - Rectifiers - Single is an important category of electronic components. Among them, the VS-8EWH06FNTR-M3 rectifier diode is a premium rectifier diode that provides operator flexibility and performance. It has unique characteristics that make it an ideal choice for a variety of applications.
The VS-8EWH06FNTR-M3 is a 6 A rectifier diode with a maximum forward current rating of 8 A. It has a voltage drop rating of 600 V and a junction temperature of 85 °C. The diode is designed in a very small MO-239 package, making it suitable for use in tight spaces or where space is limited. It is a low-loss diode, providing low waste energy and very fast switching between voltage polarities.
This diode is primarily used as a protection device. It can be used to protect sensitive electrical circuits from voltage spikes and current surges. The diode can be used in automotive, medical and home appliance applications. The VS-8EWH06FNTR-M3 can also be used in power conversion and control applications. It can be used to provide voltage regulation, rectification and frequency conversion.
The VS-8EWH06FNTR-M3 has a built-in metal oxide film in its structure, providing low on-state losses and very fast switching. This metal film is deposited directly onto the surface of the dielectric layer, allowing the metal to conduct electricity freely. This feature helps to make the diode extremely reliable and durable.
The VS-8EWH06FNTR-M3 also has a built-in temperature compensation circuit. This circuit compensates for any changes in temperature, helping to keep the diode in a consistent operation state. The temperature sensor is able to adjust the operating parameters according to any temperature changes, ensuring optimal performance at any given temperature.
The VS-8EWH06FNTR-M3 also has EMI shielding, allowing it to be used in sensitive industrial applications which require EMI immunity. Its built-in EMI shielding reduces noise from being emitted from the device and helps to protect other circuits from interference. The EMI shielding also helps to reduce EMC-related failures.
The VS-8EWH06FNTR-M3 is a very efficient rectifier diode. It has a wide operating temperature range from -40 to +105 degrees Celsius and can tolerate up to 105 degrees Celsius junction temperatures. In addition, it has a wide forward current range, making it suitable for a variety of applications. As such, the VS-8EWH06FNTR-M3 rectifier diode is an ideal choice for protecting sensitive electrical circuits, voltage regulation and power conversion.
The specific data is subject to PDF, and the above content is for reference
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