1N4247 Discrete Semiconductor Products |
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Allicdata Part #: | 1N4247-ND |
Manufacturer Part#: |
1N4247 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 600V 1A AXIAL |
More Detail: | Diode Standard 600V 1A Through Hole |
DataSheet: | 1N4247 Datasheet/PDF |
Quantity: | 3765 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 5µs |
Current - Reverse Leakage @ Vr: | 1µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | A, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
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1N4247 Application Field and Working Principle
The 1N4247 is an ultra-fast and high-efficiency rectifier diode. It is typically used in scenarios where it is required to maintain exceptionally low forward voltage drop and also accomplish switching operations at ultra-high speeds. This diode is also generally used in reverse bias configurations in combination with other components to provide protection against high-voltage transients like surges, spikes, and over-voltage conditions.
The 1N4247 is developed based on a junction-gate structure consisting of P-type and N-type semiconductor material. The device contains a hole injection layer, a hole storage layer, a first N-type semiconductor layer and also a second P-type (or PN) structure as shown in the figure. The device has an anode and a cathode, along with a single internal gate. When no external voltage is applied to the device, the gate remains in its equilibrium and the device is in the off-state.
(Figure 1: Internals of the 1N4247 diode)
When a positive voltage is applied to the anode with respect to the cathode, the 1N4247 is ignited and operated as a forward biased diode. When this happens, the hole injection layer is spread over the N-type semiconductor layer, causing several holes in the semiconductor material to gather at the interface. Now, due to the presence of the hole storage layer, the majority of these holes get suspended at the interface and a central space charge region is formed. Due to the presence of this space charge region, the depletion region height is increased and consequently, the forward voltage drop is also increased.
In the reverse bias operation, the depletion region height is increased and several new fields are created inside the semiconductor material. The most stabilized of these fields is two electric walls on both sides of the base/gate interface within the semiconductor structure as shown in figure 1. Due to the presence of these walls, the reverse voltage breakdown occurs at a lower voltage. This is one of the major advantages of the 1N4247. The device was designed to operate at very high speeds and similarly, faster recovery times can be expected from this device.
The 1N4247 can be used in many electronic applications such as single-phase bridges, alarm systems, computer peripheral devices, and line receivers. It is also well known for its robust temperature and power performance. The device has an operating temperature range of -55°C to +125°C and also a maximum continuous forward current of 10A. It is also capable of withstanding transient power surges at 2,500W peak.
Some of the applications that the 1N4247 is particularly well-suited for include AC/DC LED lighting, audio systems, detector circuits, and RF communication and power control systems. It offers optimum performance when used in systems that require blocking voltage and ultra-high-speed operation.
In conclusion, the 1N4247 diode is an ultra-fast and highly reliable rectifier that offers excellent blocking voltage and ultra-high-speed operation. It is usually used in reverse bias configurations to provide protection against high-voltage transients and is found in many electronic applications such as alarm systems, detector circuits, and RF communication and power control systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N4246GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4248GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4249GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4247GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4246GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4248GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4249GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4245 | Microsemi Co... | 2.58 $ | 1000 | DIODE GEN PURP 200V 1A AX... |
1N4246 | Microsemi Co... | 2.72 $ | 1000 | DIODE GEN PURP 400V 1A AX... |
1N4247 | Microsemi Co... | -- | 3765 | DIODE GEN PURP 600V 1A AX... |
1N4254 | Microsemi Co... | 4.17 $ | 1000 | RECTIFIER DIODEDiode |
1N4248 | Semtech Corp... | 4.68 $ | 1000 | DIODE GEN PURP 800V 1A AX... |
1N4249 | Semtech Corp... | -- | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N4255 | Microsemi Co... | 7.43 $ | 1000 | RECTIFIER DIODEDiode |
1N4256 | Microsemi Co... | 7.43 $ | 1000 | RECTIFIER DIODEDiode |
1N4257 | Microsemi Co... | 7.43 $ | 1000 | RECTIFIER DIODEDiode |
1N4246GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4248GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4249GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4246GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4248GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4249GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4246GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4249GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4246GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4247GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4249GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4245GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N4248GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N4245GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N4248GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
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