1N4248 Allicdata Electronics

1N4248 Discrete Semiconductor Products

Allicdata Part #:

1N4248S-ND

Manufacturer Part#:

1N4248

Price: $ 4.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Semtech Corporation
Short Description: DIODE GEN PURP 800V 1A AXIAL
More Detail: Diode Standard 800V 1A (DC) Through Hole Axial
DataSheet: 1N4248 datasheet1N4248 Datasheet/PDF
Quantity: 1000
250 +: $ 4.20583
Stock 1000Can Ship Immediately
$ 4.68
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: --
Description

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The 1N4248 diode is a member of a series consisting of three, namely the 1N4148, 1N4448 and 1N4248. All diodes can operate at high speeds, so they can be used in various applications requiring fast switching speeds. They are all silicon, small signal, and their complete series have a maximum continuous forward current rating of 150mA.

The primary application of the 1N4248 is as a high-speed switching diode. It can be used in a variety of applications, including high speed logic circuits, pre-emphasis and de-emphasis circuits, video signal processing and video switching/filtering circuits. It also has applications in rectifiers, clamping circuits and amplifier circuits.

The working principle of the 1N4248 consists of both PN junctions and reverse bias. When a voltage is applied on a junction, electrons and holes flow within the structure, while holes and electrons are depleted formed the depletion region. The conductivity of the junction depends upon the relative concentrations of positive and negative charge carriers. The forward bias increases the concentration of the positive and negative charge carriers, while the reverse bias reduces the concentration of the two types.

At the PN junction, the electrons and holes move in different directions. The electrons move towards the positive terminal, while the holes move towards the negative terminal. As they move, they recombine, releasing energy. The energy is released as heat and light. This is the reason why diodes can be used as a light source, such as the LED. The recombining of the electrons and holes is known as the “diode effect”.

The 1N4248 diode is a single junction device, which means it requires a single voltage source to turn it on. It is also a low voltage diode, which means it can be turned on using voltages below the normal forward bias threshold of a normal silicon diode. Furthermore, it has a fast switching speed and can be used in a variety of applications, such as high speed logic circuits, pre-emphasis and de-emphasis circuits, video signal processing and video switching/filtering circuits.

In summary, the 1N4248 diode is a high-speed switching diode that can be used in a variety of applications, including high speed logic circuits, pre-emphasis and de-emphasis circuits, video signal processing, video switching/filtering circuits, rectifiers, clamping circuits and amplifier circuits. The 1N4248 has a relatively high forward bias threshold compared to other diodes in its series; however it has a lower reverse bias threshold and a fast switching speed, making it suitable for high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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