Allicdata Part #: | APT2X60DQ100J-ND |
Manufacturer Part#: |
APT2X60DQ100J |
Price: | $ 11.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE MODULE 1KV 60A ISOTOP |
More Detail: | Diode Array 2 Independent Standard 1000V 60A Chass... |
DataSheet: | APT2X60DQ100J Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 10.79320 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 2 Independent |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io) (per Diode): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 2.8V @ 60A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 235ns |
Current - Reverse Leakage @ Vr: | 100µA @ 1000V |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT2X60DQ100J is an array of two high-power, high-efficiency Shottky rectifiers. It is a common component in many electronic devices. The rectifiers are designed to perform as diodes, allowing positive current to pass through in one direction while negatively blocking the flow of current in the opposite direction. This allows for better control of current and significantly reduces heat generation.
This type of rectifier is extensively used in a variety of applications including power supplies, motor control, communication devices, automotive electronics and other high-power circuit applications. In particular, they are ideal for use in switching power applications, such as when a transformer or other device needs to be switched on or off quickly.
The rectifiers have an impressive power density. They can handle currents of up to 2 A and voltages of up to 60 V. They have a maximum reverse leakage current of 3 μA at 25°C and a total capacitance of 200 pF. They are well-suited for use in high-speed switching applications and they have a fully-integrated design that limits losses and protects against short circuits.
The APT2X60DQ100J is constructed using two Schottky diodes, each of which consists of a P-type layer and an N-type layer. The two layers are connected by a metal “barrier”. This barrier layer is designed to be thin enough that electrons can pass through it, but thick enough that holes cannot pass through. This allows the device to act as a rectifier, blocking current in one direction and allowing current to flow in the other.
The rectifier also features a protection diode, which helps protect the device from damage caused by overvoltage or overload conditions. The device is also designed to reduce the power dissipation losses that normally occur in rectifier applications, making it more energy efficient. The Schottky diodes in the APT2X60DQ100J are able to handle high temperatures and rapid switching times, making them suitable for a range of high-power applications.
The APT2X60DQ100J is a popular device for many applications. It offers good performance in high-power rectifier and switching applications. It is extremely efficient, with low power dissipation losses, and it is well-suited for applications in which high temperatures and quick switching times are necessary. As a result, it has become a popular choice for many applications that require reliable and efficient rectifier designs.
The specific data is subject to PDF, and the above content is for reference
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