MSCD165-16 Allicdata Electronics
Allicdata Part #:

MSCD165-16-ND

Manufacturer Part#:

MSCD165-16

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE MODULE 1.6KV 165A SD2
More Detail: Diode Array 1 Pair Series Connection Standard 1600...
DataSheet: MSCD165-16 datasheetMSCD165-16 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 165A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 9mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D2
Supplier Device Package: SD2
Description

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The MSCD165-16 Diode Arrays are designed to meet the automotive industry\'s needs for high-current, high-side applications. This device features a variety of polarity configurations, allowing the designers to address multiple designs in automotive applications. This device offers a maximum of 16A in parallel or a maximum of 8A in series.

The device works by utilizing Schottky diodes in a metal oxide surge suppressor array to provide robust electrical and thermal performance. This configuration also allows for higher switching frequencies to be obtained which allows for more efficient operation at higher operating currents. The array also provides improved blocking protection from high voltage transients, as well as a wide range of very low resistance values, enabling the designer to ensure noise margins and design ruggedness levels.

The MSCD165-16 is a good choice for applications such as battery management systems, spark plug wires, starter systems, branch circuit protection, supply lighting, and automotive powertrain systems. It is suitable for applications where harsh environments including high temperatures, thermal shock, and vibration are present. In addition, this device is also suitable for automotive DC-DC applications and other automation system applications due to its high temperature and power ratings.

The operating principles of the MSCD165-16 Diode Arrays are based on the Schottky barrier effect. When a forward bias voltage is applied to the input pins of the diode, current starts to flow. Electrons cross the oxide layer of the p-type material, allowing current to flow through the device. The current continues to flow until it reaches the maximum level set by the designer. High diode leakage current is prevented in this configuration, as the voltage reaches a steady state near the forward voltage of the diode.

When a reverse bias is applied across the input pins, the movement of electrons stops, effectively blocking the current and preventing reverse voltage. This blocking of reverse voltage ensures that the external circuitry is protected from high voltage transients and other harmful current conditions. The reverse blocking voltage is determined by the number of Schottky diodes in the array, which is typically between 6 and 16.

Another important feature of the MSCD165-16 Diode Arrays is the low to very low on-state resistance and very low diode leakage current, enabled by the Schottky barrier effect. Low on-state resistance reduces power losses and helps to keep the thermals of the device under control. Low diode leakage current reduces EMI interference, thus increasing the overall system efficiency.

In conclusion, the MSCD165-16 Diode Arrays offer a wide range of features and benefits that are ideal for automotive applications. A variety of polarity configurations are available, allowing for maximum flexibility and design optimization. The Schottky diodes included in the array provide robust electrical and thermal performance, as well as low to very low on-state resistance and very low diode leakage current for improved system efficiency. Finally, the reverse voltage blocking feature ensures that the external circuitry is protected from high voltage transients and other harmful current conditions.

The specific data is subject to PDF, and the above content is for reference

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