VS-43CTQ100STRRPBF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io) (per Diode):	20A
Voltage - Forward (Vf) (Max) @ If:	810mV @ 20A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1mA @ 100V
Operating Temperature - Junction:	-55°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Base Part Number:	43CTQ100S

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Introduction

The VS-43CTQ100STRRPBF is a rectifier array designed for industrial applications. It is a low silhouette, single-sided device that incorporates four contacts for D.C. or A.C. blocking, unity gain stability and added cost savings. The device can provide fast switching and high current capacity, in a miniature package.

Features

The VS-43CTQ100STRRPBF rectifier array has several features that make it an attractive option for industrial applications. These features include: - Low RDS(on) MOSFETs; - High ESD protection; - Internal circuitry enables improved design flexibility; - Four contact configuration allows for AC and DC blocking; - Separate positive and negative voltage supply; - Suitable for high temperature operation (up to 180°C); - Integrated temperature protection.

Applications

The VS-43CTQ100STRRPBF is well suited to use in a variety of industrial applications. It is ideal for use in power conversion applications, such as motor control systems, voltage regulation, and direct current (DC) charging systems. The device can also be used in power distribution systems, telecommunications systems, and vehicle electrical systems. Additionally, the device is UL certified and RoHS compliant.

Working Principle

The VS-43CTQ100STRRPBF rectifier array works by using a field-effect transistor (FET) to convert one kind of electrical energy or signal into another. By applying a voltage across a FET, the device can control the current flow within the FET. This is because the electric field used to create the FET’s channel (the region of the FET where current can flow) is controlled by the applied voltage. By connecting a gate, the voltage applied to the FET can be used to control current flow from source to drain, or from source to drain and from drain to source. In the case of the VS-43CTQ100STRRPBF, four FETs are connected in a parallel configuration. When a voltage is applied across the FETs, the current flows through two paths: one path via the anode and one path via the cathode. The FETs act as a rectifier, allowing current to flow in one direction only. This is because the FETs are configured to block current flow in the reverse direction. In addition, the device provides a low voltage RC snubber circuit to protect against voltage spikes during AC operation.

Conclusion

The VS-43CTQ100STRRPBF rectifier array is a compact and efficient solution for industrial applications. The device offers a low RDS(on) MOSFET, high ESD protection, four contacts for AC and DC blocking, and temperature protection. It is suitable for use in motor control systems, voltage regulation, DC charging systems, power distribution systems, telecommunications systems, and vehicle electrical systems. The device works by using FETs to control current flow from source to drain and from drain to source.

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