ZVN4210A Allicdata Electronics
Allicdata Part #:

ZVN4210A-ND

Manufacturer Part#:

ZVN4210A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 450MA TO92-3
More Detail: N-Channel 100V 450mA (Ta) 700mW (Ta) Through Hole ...
DataSheet: ZVN4210A datasheetZVN4210A Datasheet/PDF
Quantity: 3156
Stock 3156Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Description

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AZVN4210A is a high-performance insulated gate bipolar transistor (IGBT) power transistor, which combines the high input impedance of insulated gate FETs with the low saturation voltage of bipolar transistors. It is designed for use in high-speed switching apps, including motor control, power conversion and UPS applications.

In terms of its structure, the ZVN4210A consists of a common-emitter bipolar transistor, an N-channel insulated gate FET and a protection network. The collector terminal of the bipolar transistor is connected to a high-current emitter, while the emitter is connected to a low-impedance source. The N-channel FET is then connected to the emitter, with the insulated gate connected to the gate terminal of the N-channel FET. The protection network is connected to the emitter terminal, which monitors the emitter voltage to prevent any excessive voltage.

When it comes to its applications, the ZVN4210A is ideally suited for use in high-power switching applications, as it offers high input impedance, low saturation voltage and high frequency operation. It is especially useful in applications that involve low on-resistance such as motor control, power conversion and UPS applications.

In terms of its working principle, the ZVN4210A uses the gate-control principle, which means the gate of the FET is connected to the base of the bipolar transistor. When the gate voltage is low, the FET is in the off state, and no current flows through the device. When the gate voltage is increased, the current through the device increases, and the collector current increases. This process is called dynamic conduction. When the gate voltage is high enough to turn on the FET, the collector-emitter voltage will increase, but when the gate voltage is increased further, the collector-emitter voltage will drop.

The ZVN4210A is a versatile power transistor that is ideal for high-speed switching applications, such as motor control, power conversion and UPS applications. It offers high input impedance, low saturation voltage and high frequency operation. Furthermore, it features a gate-controlled principle that allows for dynamic conduction, enabling it to be used in applications that require low on-resistance.

The specific data is subject to PDF, and the above content is for reference

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