ZXMN6A09KQTC Allicdata Electronics
Allicdata Part #:

ZXMN6A09KQTC-ND

Manufacturer Part#:

ZXMN6A09KQTC

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 11.8A TO252
More Detail: N-Channel 60V 11.8A (Ta) 10.1W (Ta) Surface Mount ...
DataSheet: ZXMN6A09KQTC datasheetZXMN6A09KQTC Datasheet/PDF
Quantity: 1000
2500 +: $ 0.48904
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Series: Automotive, AEC-Q101
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 40 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1426pF @ 30V
FET Feature: --
Power Dissipation (Max): 10.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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ZXMN6A09KQTC Application Field and Working Principle

The ZXMN6A09KQTC (hereinafter: ZXMN6A09KQTC) is a Vishay Siliconix high-voltage N-Channel MOSFET. It is a small signal MOSFET with a high-voltage rating of up to 1200V, making it suitable for a wide range of applications such as motor control, switching applications, and power supply circuits. This article will discuss the ZXMN6A09KQTC\'s application field, as well as its working principle.

Application Field of ZXMN6A09KQTC

The ZXMN6A09KQTC\'s 1200V rating makes it suitable for building high power circuits such as solenoid drivers, motor controls, and switching applications. It can also be used in portable devices and embedded systems, where low power consumption and a small form factor are desired. The ZXMN6A09KQTC is also suitable for regulator circuits, such as voltage, current, and active power compensation. In addition, its high input/output impedance makes it suitable for filtering applications.

Working Principle of ZXMN6A09KQTC

A MOSFET is an insulated-gate field-effect transistor (IGFET). It is a semiconductor device that is built from a wafer of doped silicon and consists of a source, a drain, and a gate. The gate is electrically insulated from the source and drain by a very thin layer of silicon dioxide. When a voltage is applied to the gate, it creates an electric field between the gate and the source and/or the drain. This electric field Ccan be used to control the current that flows between the source and the drain. The ZXMN6A09KQTC\'s gate voltage is controlled by an external voltage source, which is used to turn the device on and off.

When the ZXMN6A09KQTC is in the \'on\' state, a relatively small voltage applied to the gate controls the drain-source current. This is referred to as \'enhancement mode\' and it is the main mode of operation for MOSFETs. In this mode, the current between the source and the drain can be controlled accurately and quickly. When the device is in the "off" state, the gate voltage is pulled down below the threshold level and the current between the source and drain is effectively blocked, which prevents any current from flowing.

Conclusion

The ZXMN6A09KQTC is a high-voltage N-Channel MOSFET which can be used in a variety of applications, such as motor controls, power supply circuits, and voltage/current/active power compensation. Its operation is based on the electric field which is created between the gate and the drain when a voltage is applied to the gate. The gate voltage can then be used to control the drain-source current, allowing the device to be turned on and off.

The specific data is subject to PDF, and the above content is for reference

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