Allicdata Part #: | SI4413CDY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4413CDY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 8-SOIC |
More Detail: | P-Channel 30V Surface Mount 8-SO |
DataSheet: | SI4413CDY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI4413CDY-T1-GE3 is a P-channel logic level enhancement mode metal-oxide-semiconductor field-effect-transistor (MOSFET). It is a high-efficiency, highly flexible, low-cost transistor that can be used in a variety of applications. The SI4413CDY-T1-GE3 is designed to handle high-current loads of up to 20A with minimal switching losses and low on-resistance. This makes it well-suited for a wide range of applications including motor control, HVAC systems, power inverters, and power supplies.
The SI4413CDY-T1-GE3 is part of a family of MOSFETs manufactured by Sanken. This specific transistor is housed in a surface-mount SOT-23 package and is typically used in low-power applications such as motor control and low-voltage load switches. The device features an on-resistance of just 16 mOhms at a maximum current rating of 20A, making it a good choice for energy-saving, low-noise systems.
In terms of its working principle, the SI4413CDY-T1-GE3 is a P-channel enhancement mode MOSFET, with an insulated gate and a source connected to the gate. When a voltage is applied to the gate, electrons will flow from the source to the drain. This flow of electrons is responsible for the current that passes through the device and this is known as the “channel current”. The SI4413CDY-T1-GE3 has an on-resistance of 16 mOhms, which indicates a low resistance between the source and drain when the channel is “on”.
The SI4413CDY-T1-GE3 can be used in applications such as motor control systems, power invertors, HVAC systems and motor drivers. In motor control systems, for example, the transistor can be used to provide the power to drive an electric motor. In power inverter applications, the SI4413CDY-T1-GE3 can be used to convert DC power to AC power, while it can be used in HVAC systems and motor drivers to regulate the flow of current to the system. The low on-resistance of the SI4413CDY-T1-GE3 makes it well-suited for such applications.
In conclusion, the SI4413CDY-T1-GE3 is a P-channel logic level enhancement mode MOSFET that features a low on-resistance of 16 mOhms and high-current maximum of 20A. The device is well-suited for a variety of applications, including motor control, HVAC systems, power inverters, and power supplies, due to its excellent energy-saving, low-noise characteristics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4448DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 50A 8-SOI... |
SI4401DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.7A 8-SO... |
SI4404DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
SI4412ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 5.8A 8-SO... |
SI4465ADY-T1-GE3 | Vishay Silic... | 0.68 $ | 5000 | MOSFET P-CH 8V 8SOICP-Cha... |
SI4430BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 14A 8-SOI... |
SI4447DY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET P-CH 40V 3.3A 8-SO... |
SI4410DY,518 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V SOT96-1N-... |
SI4410DY | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 10A 8-SOI... |
SI4435DYTR | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 8A 8-SOIC... |
SI4420DY | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4410DYPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 10A 8-SOI... |
SI4420DYPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4435DYPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 8A 8-SOIC... |
SI4420DYTR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4403BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 7.3A 8SOI... |
SI4409DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 150V 1.3A 8-S... |
SI4418DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 200V 2.3A 8-S... |
SI4446DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V 3.9A 8-SO... |
SI4470EY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 9A 8-SOIC... |
SI4484EY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 4.8A 8-S... |
SI4401DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.7A 8-SO... |
SI4404DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
SI4406DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4406DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4409DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 150V 1.3A 8-S... |
SI4411DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 9A 8-SOIC... |
SI4411DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 9A 8-SOIC... |
SI4412ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 5.8A 8-SO... |
SI4438DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 36A 8-SOI... |
SI4438DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 36A 8-SOI... |
SI4448DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 12V 50A 8-SOI... |
SI4453DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 10A 8-SOI... |
SI4453DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 10A 8-SOI... |
SI4462DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 200V 1.15A 8-... |
SI4466DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 9.5A 8-SO... |
SI4483EDY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 10A 8-SOI... |
SI4486EY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.4A 8-S... |
SI4493DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 10A 8SOIC... |
SI4493DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 10A 8SOIC... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...