TPCA8120,LQ(CM Allicdata Electronics
Allicdata Part #:

TPCA8120LQ(CM-ND

Manufacturer Part#:

TPCA8120,LQ(CM

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 30V 45A 8SOP-ADV
More Detail: P-Channel 30V 45A (Ta) 1.6W (Ta), 45W (Tc) Surface...
DataSheet: TPCA8120,LQ(CM datasheetTPCA8120,LQ(CM Datasheet/PDF
Quantity: 1000
3000 +: $ 0.58098
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Series: U-MOSVI
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3 mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs (Max): +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds: 7420pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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The TPCA8120LQ CM is a Field Effect Transistor (FET) used in a wide range of electrical and electronic applications. It is a single MOSFET that can be used in a variety of ways, such as to regulate the current flow in circuits, to switch electronic signals, or to enable the operation of certain circuit components.

A FET or field effect transistor is a semiconductor device that has its main current controlling element or gate located between two other terminals known as the source and drain. It operates through the use of electric fields to control the current flow between the source and drain. This type of transistor is more energy efficient than a traditional bipolar transistor, as it does not require current to be present in order to operate.

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. This type of transistor is made up of a field gate that is connected to a channel between the source and drain. When a voltage is applied to the gate, it creates an electric field which in turn controls the current that can flow through the channel. This makes it an effective means of controlling the amount of current in a circuit.

The TPCA8120LQ CM is a special type of MOSFET specifically designed for use in low power applications. It is equipped with an integrated ESD protection feature that protects the FET from damage due to electrostatic discharge. This makes it suitable for use in consumer electronic devices such as mobile phones, laptops, and tablets. Its typical drain-source on state resistance is also low enough to allow for efficient power regulation.

In addition to its low power usage, the TPCA8120LQ CM is also designed to be easy to integrate into a wide range of circuits. It is equipped with a low bias current and a low threshold voltage, which makes it suitable for use in applications where power requirements are tightly limited. This makes it a cost-effective solution for projects such as wireless charging, LED lighting, and DC voltage regulation.

To conclude, the TPCA8120LQ CM single MOSFET is an efficient, cost-effective and reliable solution for many power control and switching applications in consumer electronics and other electrical circuits. With its integrated ESD protection and efficient power regulation, it is an ideal choice for projects that require low power and high reliability.

The specific data is subject to PDF, and the above content is for reference

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