FDPF5N60NZ Allicdata Electronics
Allicdata Part #:

FDPF5N60NZ-ND

Manufacturer Part#:

FDPF5N60NZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 4.5A TO-220F
More Detail: N-Channel 600V 4.5A (Tc) 33W (Tc) Through Hole TO-...
DataSheet: FDPF5N60NZ datasheetFDPF5N60NZ Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: UniFET-II™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
FET Feature: --
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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F

The FDPF5N60NZ is a vertical DMOS FET (Field Effect Transistor). It is a metal oxide semiconductor field-effect transistor (MOSFET) that works in the single device configuration. The FDPF5N60NZ is a reliable, powerful, and efficient FET for switching applications. It is an excellent choice for battery-powered or low voltage applications. The FDPF5N60NZ is an ideal component for power management, high frequency switching, and power amplifiers.

The device has a maximum current rating of 60 amps, making it ideal for use in high current applications. The maximum operating temperature is up to 10V, which is suitable for use in automotive, robotic, or aviation power systems. Furthermore, the device has a low gate to drain capacitance, which also allows for higher switching frequencies.

FDPF5N60NZ works in a single device configuration. It is an enhancement-mode MOSFET, meaning that it needs an external gate bias voltage to turn it on. The source and drain terminals are connected to the input (Vgs) and the output (Vds). When an external voltage is applied to the gate (Vgs) it will turn the device on. The voltage threshold is 4 volts, meaning that if the Vgs is lower than 4 volts then the channel will not be turned on.

When the device is on, current will flow from the source and drain terminals, which will ultimately be controlled by the value of the external bias at the gate. The internal structure of the FDPF5N60NZ includes a number of layers of insulation and metal, allowing for excellent electrical characteristics. The device also has a maximum drain to source breakdown voltage of 600V, allowing for high voltage operation.

The FDPF5N60NZ is ideal for a variety of applications, including high-frequency switching, DC-DC converters, motor control, power supply design, and automotive applications. It is designed to withstand high current while providing excellent on and off state control. In addition, the FDPF5N60NZ is also a low-cost, low-power consumption solution. Furthermore, the device has a high electro-magnetic interference (EMI) immunity and is RoHS compliant.

The FDPF5N60NZ is a reliable and powerful vertical-DMOSFET that can be used in a variety of applications. It offers a low gate to drain capacitance, low on resistance, and high operating temperature, all of which make it an ideal choice for power control and switching applications. Furthermore, its low voltage threshold, low cost, and low power consumption make it an excellent value for money.

The specific data is subject to PDF, and the above content is for reference

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