Allicdata Part #: | SI8401DB-T1-E3-ND |
Manufacturer Part#: |
SI8401DB-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 3.6A 2X2 4-MFP |
More Detail: | P-Channel 20V 3.6A (Ta) 1.47W (Ta) Surface Mount 4... |
DataSheet: | SI8401DB-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Vgs (Max): | ±12V |
FET Feature: | -- |
Power Dissipation (Max): | 1.47W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 4-Microfoot |
Package / Case: | 4-XFBGA, CSPBGA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI8401DB-T1-E3 is a single-channel ultra-low capacitance ESD clamp device. It is a general purpose, low capacitance Transient Voltage Suppressor (TVS) diode with excellent ESD protection. Its superior performance and low capacitance make it ideal for protecting high frequency data lines from ESD, EFT and other transients.
This high-performance ESD protection device is designed to protect sensitive logic and static storage devices from ESD and other transients. It is well-suited for EMC designs, smartphones, tablets and other portable electronic devices. It features a low clamping voltage of 6.5V typical, with a maximum clamp voltage of 8.5V. The diode has a breakdown voltage of 15.8V and a current rating of 3.5A peak.
The SI8401DB-T1-E3 is built using state-of-the-art silicon processing technologies, and is highly reliable. It has a very low capacitance of 83pF typical, a typical capacitance variation of 3%, and excellent clamping performance. This device is also RoHS compliant, which is a big plus for manufacturers.
When it comes to the application field and working principle of this device, it is designed to provide superior ESD protection against electrostatic discharges. It can protect electronic circuits from ESD and other transient events such as EFT, lightning and cable discharges. The device prevents damage to electronics by diverting the voltage surge away from vulnerable components.
When exposed to an electrostatic discharge, the SI8401DB-T1-E3 quickly responds to the over-voltage condition. It will conduct current away from the circuit and clamp the voltage of the line to a safe level. This helps to protect the vulnerable components from damage caused by the discharge. The device also has a low capacitance, which helps to reduce signal attenuation on high frequency data lines.
The SI8401DB-T1-E3 is an ideal device for ultra-low capacitance ESD protection. It has superior performance compared to other devices, and its excellent clamping performance helps to protect sensitive logic and static storage devices from ESD, EFT and other transients. Its low capacitance and high clamping voltage make it perfect for protecting high-speed data lines. Its main application is for EMC designs, smartphones, tablets, and other portable electronic devices, where ESD protection is essential.
The specific data is subject to PDF, and the above content is for reference
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