FDPF39N20TLDTU Allicdata Electronics
Allicdata Part #:

FDPF39N20TLDTU-ND

Manufacturer Part#:

FDPF39N20TLDTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 39A TO220F
More Detail: N-Channel 200V 39A (Tc) 37W (Tc) Through Hole TO-2...
DataSheet: FDPF39N20TLDTU datasheetFDPF39N20TLDTU Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V
FET Feature: --
Power Dissipation (Max): 37W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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FDPF39N20TLDTU is a power MOSFET application field, also known as "high-voltage power FET," which is a type of MOSFET (metal oxide semiconductor field effect transistor) that has been designed for operation with high voltages and high current levels. It is a versatile tool for numerous applications in power supplies, robotics and automotive electronics, providing excellent switching performance, low resistance, and the ability to handle high power. The FDPF39N20TLDTU is also used in audio amplifiers, switched-mode power supplies, voltage converters and other power converters.The working principle behind the FDPF39N20TLDTU is that its gate has high insulation from the rest of the device to prevent current leakage and prevent the MOSFET from shutting down when high voltages are applied. The gate is constantly maintained in its "on" state, allowing the current to flow freely according to the bias voltage applied between the source and drain terminals. The gate voltage presents a resistive path that controls the drain current according to the applied gate voltage—higher gate voltages result in higher drain currents.The FDPF39N20TLDTU is a n-channel MOSFET, which means that the most commonly used type of conductivity flow is from source to drain by electrons. As long as the gate voltage is higher than the source voltage the electrons can freely flow from source to drain. The FDPF39N20TLDTU can also be used in an analog mode, where the gate voltage is used to control the drain current, thus allowing for precise control over the current flow.The FDPF39N20TLDTU is designed for applications that require large amounts of current, such as industrial motor controls, AC motor drives, and power supplies. Its ability to handle high power makes it a viable alternative to standard power MOSFETs. Its low on-state drain to source resistance and its high power handling capability reduces heat dissipation and improves circuit efficiency. Its high-voltage rating also eliminates the need for multiple parallel MOSFETs for systems that would otherwise require these components.In addition to its versatility, the FDPF39N20TLDTU also incorporates several safety features. Its integrated over-temperature and current protections reduce the risk of destructive amounts of current should an overload or short circuit occur. It also features an integrated thermal overload protection, which helps to reduce drive failure and maintain consistent performance even when high temperatures are present.The FDPF39N20TLDTU is a great solution for applications that require precise control of current flow while handling high power levels. Its flexibility and safety features make it a great choice for a wide range of applications. It can be used in industrial motor controls, AC motor drives, switched mode power supplies, voltage converters, audio amplifiers and power converters.

The specific data is subject to PDF, and the above content is for reference

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