IXTH6N150 Allicdata Electronics
Allicdata Part #:

IXTH6N150-ND

Manufacturer Part#:

IXTH6N150

Price: $ 5.99
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1500V 6A TO-247
More Detail: N-Channel 1500V 6A (Tc) 540W (Tc) Through Hole TO-...
DataSheet: IXTH6N150 datasheetIXTH6N150 Datasheet/PDF
Quantity: 1000
30 +: $ 5.39133
Stock 1000Can Ship Immediately
$ 5.99
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1500V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V
FET Feature: --
Power Dissipation (Max): 540W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH6N150 is a silicon N-channel MOSFET transistor. It is part of a family of N-channel MOSFETs, often known as low-voltage MOSFETs. These transistors are designed to combine low on-resistance with low gate threshold voltage, allowing them to be used in a range of high-performance applications. This article will discuss the IXTH6N150 application field and working principle.

Application Field

The IXTH6N150 can be used in a range of applications. It is particularly suitable for switching applications where low gate threshold voltage and low on-resistance are desired. It can be used as an automatic load switch in distributed power systems such as 5V, 12V and 24V-backplane systems. It can also be used in high-speed pulsewidth modulation (PWM) control circuits for DC-DC converters and motor drives.

The IXTH6N150 can also be used for other applications, such as for high-side switching in DC-DC converters, and for low-side switching in brushless DC motor drives. It is also useful for high-frequency switching applications such as inverters and lighting controllers.

Working Principle

The IXTH6N150 is an N-channel MOSFET transistor. It is constructed from two layer of silicon, with semiconductor material connecting them together. This means that when a voltage is applied to the gate, a current will flow between the two layers of silicon. This current is what is known as the "gate current" and is responsible for controlling the transistor. The gate current is controlled by the resistance of the gate. The lower the resistance, the higher the gate current, and the greater the control over the transistor.

The IXTH6N150 is designed to have a low on-resistance, meaning that when turned on, it will allow a high current to flow. This is useful for switching applications, as it ensures that the switch is able to turn on quickly and reliably. The IXTH6N150 also has a low gate threshold voltage, meaning that the voltage required to turn it on is low. This is useful for low-power applications, as it ensures that the switch can be activated without the use of a large voltage source.

The IXTH6N150 is also designed to be compatible with a variety of control circuits. This means that it can be used in a wide range of applications, ranging from automated load switching to high-frequency switching in inverters and lighting controllers. In this way, the IXTH6N150 is able to provide a highly versatile and reliable switching solution.

Conclusion

The IXTH6N150 is a highly versatile N-channel MOSFET transistor, suitable for use in a variety of applications. Its low on-resistance and low gate threshold voltage make it an excellent choice for switching applications, while its compatibility with a variety of control circuits makes it suitable for a range of high-performance applications.

The specific data is subject to PDF, and the above content is for reference

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