Allicdata Part #: | IXTH420N04T2-ND |
Manufacturer Part#: |
IXTH420N04T2 |
Price: | $ 5.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 40V 420A TO-247 |
More Detail: | N-Channel 40V 420A (Tc) 935W (Tc) Through Hole TO-... |
DataSheet: | IXTH420N04T2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 5.39133 |
Input Capacitance (Ciss) (Max) @ Vds: | 19700pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 935W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
Series: | TrenchT2™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 420A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 315nC @ 10V |
Vgs (Max): | ±20V |
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The IXTH420N04T2 is an advanced n-channel enhancement mode Power MOSFET with low drain-source on-state resistance. This MOSFET is designed for use in applications that require low gate charge and low on-resistance. It is constructed using a vertical DMOS power structure and features several low impedance gate terminals as well as source, drain and substrate contacts.
The IXTH420N04T2 features high-efficiency power handling capabilities and is ideal for applications such as DC-DC converters, lighting drivers, motor drivers, battery power management, active power factor correction, power levels, and power distribution. In addition, this MOSFET is used in applications where reduced switching losses are desired.
The IXTH420N04T2 has an operating voltage of 40V and a maximum drain current of 4A. It has a voltage gate threshold of 4V and an on-resistance of 0.042Ω. The drain-source breakdown voltage is 40V when the gate-source voltage is 0V. This MOSFET offers very fast switching speeds and excellent thermal stability.
The working principle behind the IXTH420N04T2 is that it acts as an electronic switch and allows current to flow from source to drain when a positive voltage (VGS) is applied to the gate of the device. The drain-source resistance of the MOSFET is determined by the magnitude of the gate voltage, and it is typically very small compared to other types of transistors, such as BJTs. As the gate voltage increases, the drain-source resistance decreases, allowing current to flow more easily. When the gate voltage is removed, the IXTH420N04T2 will no longer conduct, making it act as an electronic switch.
The IXTH420N04T2 also features a low gate charge, which minimizes the power dissipation and increases the switching speed of the device. This contributes to the device\'s high efficiency and low operating temperature. Furthermore, this MOSFET is highly reliable and offers excellent surge performance.
Overall, the IXTH420N04T2 is an excellent MOSFET for a variety of different applications, including DC-DC converters, motor drivers, power distribution and lighting drivers. Its advanced power handling capabilities, coupled with its low drain-source on-state resistance and low gate charge, make it an ideal choice for any application requiring high efficiency and low switching losses.
The specific data is subject to PDF, and the above content is for reference
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