AO4822L_101 Allicdata Electronics
Allicdata Part #:

AO4822L_101-ND

Manufacturer Part#:

AO4822L_101

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 30V 8A
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8A 2W Surface ...
DataSheet: AO4822L_101 datasheetAO4822L_101 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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AO4822L_101 is a driver chip developed by Alpha and Omega Semiconductor (AOS) that is used to control or amplify current. It is classified as an array transistor and it is an enhancement-mode Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is specifically designed to drive medium to high power loads efficiently.

The AO4822L_101 has a 4-channel output and is capable of providing a maximum current of 3A per channel. It also features protection circuits for over-voltage protection to ensure that operation is within safe limits. The AO4822L_101 possesses high noise immunity and reliable performance and is often used in motor drive applications. Additionally, its high current capability makes it well-suited for LED lighting, Power over Ethernet (PoE), and power converter designs.

The working principle of the AO4822L_101 relies on the utilization of an N-channel MOSFET. It consists of 4 output channels that are connected through a common source. The output voltage is controlled by the gate-to-source voltage of the MOSFET. The output current is controlled by the Drain to Source voltage of the MOSFET.

The AO4822L_101 combines a drive circuit with a MOSFET array to control and amplify current in motor drive applications or other high-power current loads. The driver circuit is capable of providing the signal to drive the four MOSFETs while the MOSFET array amplifies the signal and controls the current flow.

The driver circuit provides high peak currents and has built-in protection for over-current and over-temperature conditions. The protection circuit helps ensure that the AO4822L_101 maintains a safe operating temperature and current load even when under load.

The AO4822L_101 has a low RDS(ON) and low gate charge which is especially beneficial for high loads and power conversion applications. The low gate charge means that the device does not require a high current driver to operate, making it more energy efficient.

In summary, the AO4822L_101 is an array MOSFET designed to drive medium to high power loads efficiently. It combines a drive circuit with a MOSFET array to control and amplify current in motor drive applications or other high-power current loads. It provides high peak currents with protection circuits for over-voltage and over-temperature conditions and is ideal for applications such as LED lighting, Power over Ethernet (PoE) and power converter designs.

The specific data is subject to PDF, and the above content is for reference

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