Allicdata Part #: | TB3100HDITR-ND |
Manufacturer Part#: |
TB3100H-13 |
Price: | $ 0.29 |
Product Category: | Circuit Protection |
Manufacturer: | Diodes Incorporated |
Short Description: | THYRISTOR PROTECT BIDIR 100A SMB |
More Detail: | N/A |
DataSheet: | TB3100H-13 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
30000 +: | $ 0.25780 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Discontinued at Digi-Key |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Breakover: | 350V |
Voltage - Off State: | 275V |
Voltage - On State: | 3.5V |
Current - Peak Pulse (8/20µs): | 400A |
Current - Peak Pulse (10/1000µs): | 100A |
Current - Hold (Ih): | 150mA |
Number of Elements: | 1 |
Capacitance: | 80pF |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
?Thyristors (also known as SCRs or Silicon Controlled Rectifiers) are devices that allow the control of high-voltage electric power flow. They can be used in various application areas such as motor speed control, voltage regulation, rectification, and protection from over-voltages and other power disturbances. The TB3100H-13 is a type of thyristor manufactured by NTE Electronics. This article will discuss the application field and working principle of the TB3100H-13 thyristor.
The TB3100H-13 is a SCR with a press-fit 300 millimeter lead-free component. Its operating range is from -60 to 175 degrees Celsius. It is used in a variety of applications such as•electric power control •rectification•switch-mode power supplies•power management•electronic lighting systems•solar panel control•motor speed control•power factor correctionIt is also used as a protective device against surges, transients, and over-voltage.
The TB3100H-13 operates based on the principle of PNPN switching. Its structure consists of two PN junctions. Each of these junctions is composed of two layers formed by doping a silicon semiconductor material. The two layers are connected to form the PNPN structure. This structure enables the device to operate as a switch. When voltage is applied to the PN junction, current flows and the device turns on. Conversely, when the voltage applied to the PN junction is reversed, the device turns off.
The TB3100H-13 is designed with a built-in reverse-blocking mechanism. This means that the device will turn off in the event of an reverse voltage applied across the thyristor. It is also designed with a low-power trigger circuit, which reduces the amount of time needed for the thyristor to turn on or off. The device also has built-in protection mechanisms that prevent it from being damaged by surge voltages and other disturbances.
The TB3100H-13 is a very useful device in applications where high-voltage control is required. It is also used for power management, motor speed control, rectification, surge protection, and other applications. The PNPN structure and built-in protection mechanisms make the TB3100H-13 a reliable and cost effective device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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