TB3100M-13-F Circuit Protection |
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Allicdata Part #: | 1034-TB3100M-FDITR-ND |
Manufacturer Part#: |
TB3100M-13-F |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Diodes Incorporated |
Short Description: | THYRISTOR PROTECT BIDIR 50A SMB |
More Detail: | N/A |
DataSheet: | TB3100M-13-F Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Breakover: | 350V |
Voltage - Off State: | 275V |
Voltage - On State: | 3.5V |
Current - Peak Pulse (8/20µs): | 250A |
Current - Peak Pulse (10/1000µs): | 50A |
Current - Hold (Ih): | 150mA |
Number of Elements: | 1 |
Capacitance: | 60pF |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
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TVS - Thyristors are semiconductor devices which use thyristors to control current flow in an electrical circuit. The TB3100M-13-F is a three-terminal TVS that can be used for high speed transient surge protection. This device is part of an overvoltage protection family of devices that operate through a precise voltage level that is selected by a voltage setting pin.
The TB3100M-13-F\'s application field ranges from personal computer, telecom system voltage signaling, and lightning protection. It can also be used in Industrial & Instrumentation applications, power source protection, and other sensitive electronics. Further, Its speedy response time can keep the output transistors from being destroyed by voltage or current transients.
The working principle of the TB3100M-13-F involves a three-terminal field protecting diode. It can be used with easily achievable appropriate parameters. When the voltage on the diode rises above the reverse breakdown voltage, current flows through it, making it trigger. The current applied to the anode goes through the device to the cathode, and the output is kicked from high-impedance state to low-impedance state, providing protection for the device.
The TB3100M-13-F is designed to have low capacitance and low internal power dissipation, enabling it to protect high-frequency charge pumps and high-speed interfaces. The device is highly immune to dv/dt-induced noises, which are caused by spike changes in voltage. The high surge capability of this device enables it to provide effective protection against high-energy transients.
The TB3100M-13-F is a unique three-terminal diode designed primarily for high-speed transient surge protection. The device is designed with high surge capability and is capable of handling high-energy transients, as well as providing protection against dv/dt-induced noises. It is also designed to have low capacitance and low internal power dissipation, enabling it to protect high-frequency charge pumps and high-speed interfaces.
The specific data is subject to PDF, and the above content is for reference
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