TB3100M-13-F Allicdata Electronics

TB3100M-13-F Circuit Protection

Allicdata Part #:

1034-TB3100M-FDITR-ND

Manufacturer Part#:

TB3100M-13-F

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Diodes Incorporated
Short Description: THYRISTOR PROTECT BIDIR 50A SMB
More Detail: N/A
DataSheet: TB3100M-13-F datasheetTB3100M-13-F Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 3.5V
Current - Peak Pulse (8/20µs): 250A
Current - Peak Pulse (10/1000µs): 50A
Current - Hold (Ih): 150mA
Number of Elements: 1
Capacitance: 60pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

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TVS - Thyristors are semiconductor devices which use thyristors to control current flow in an electrical circuit. The TB3100M-13-F is a three-terminal TVS that can be used for high speed transient surge protection. This device is part of an overvoltage protection family of devices that operate through a precise voltage level that is selected by a voltage setting pin.

The TB3100M-13-F\'s application field ranges from personal computer, telecom system voltage signaling, and lightning protection. It can also be used in Industrial & Instrumentation applications, power source protection, and other sensitive electronics. Further, Its speedy response time can keep the output transistors from being destroyed by voltage or current transients.

The working principle of the TB3100M-13-F involves a three-terminal field protecting diode. It can be used with easily achievable appropriate parameters. When the voltage on the diode rises above the reverse breakdown voltage, current flows through it, making it trigger. The current applied to the anode goes through the device to the cathode, and the output is kicked from high-impedance state to low-impedance state, providing protection for the device.

The TB3100M-13-F is designed to have low capacitance and low internal power dissipation, enabling it to protect high-frequency charge pumps and high-speed interfaces. The device is highly immune to dv/dt-induced noises, which are caused by spike changes in voltage. The high surge capability of this device enables it to provide effective protection against high-energy transients.

The TB3100M-13-F is a unique three-terminal diode designed primarily for high-speed transient surge protection. The device is designed with high surge capability and is capable of handling high-energy transients, as well as providing protection against dv/dt-induced noises. It is also designed to have low capacitance and low internal power dissipation, enabling it to protect high-frequency charge pumps and high-speed interfaces.

The specific data is subject to PDF, and the above content is for reference

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