TB3100H-13-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thyristors, commonly referred to as silicon controlled rectifier (SCR), are a three-terminal semiconductor device that can be used to control and switch electric power. One of the most popular thyristors is the TB3100H-13-F, which is used in a variety of applications. This article will discuss the TB3100H-13-F application field and its working principle.

The TB3100H-13-F is designed to be used in AC or DC voltage input pass elements. It is most commonly used in switch-mode applications such as motor control and AC/DC converter circuits, as well as in high-speed digital logic outputs. The power rating of the TB3100H-13-F is 1600 volts and 50 amps in the case of DIAC designs. The maximum junction temperature of the device is 175°C. The device is designed to be used in harsh environments, and has a very low on-state voltage drop of 0.25 volts.

One of the most popular applications for the TB3100H-13-F is in motor control. This device can be used to control the speed of an AC electric motor by controlling the voltage or current across the motor. It can also be used to provide over-temperature protection to an electric motor by limiting the current to the motor when it becomes too hot. This helps to protect the motor from damage. The same device can be used to protect AC circuits from short circuit and overload conditions.

The TB3100H-13-F also has application in AC power supplies such as inverters, AC voltage regulators, AC/DC converters, and sensitive start switches. It is suitable for switching applications where high current and voltage is required, and the device is capable of withstanding significant inrush currents. The device can also be used for filtering applications, providing reverse surge protection, and serving as a current limiter in over-current protection circuits.

The working principle of the TB3100H-13-F is based on the theory of p-n junction. The device has a boron-doped n-type layer and an aluminum-doped p-type layer. The depletion region between these two layers acts as a barrier and prevents current from flowing until the depletion region is changed by applying an appropriate voltage to the gate of the device. When an external voltage is applied to the gate, the barrier is removed, allowing current to flow through the device.

The TB3100H-13-F is an excellent device for controlling and switching power, and finds applications in a variety of applications. Unlike other thyristors, the TB3100H-13-F has a very low on-state voltage drop of 0.25 volts, allowing it to be used in low voltage applications. The device is also capable of withstanding significant inrush currents, making it a very reliable and versatile device.

The specific data is subject to PDF, and the above content is for reference