NXPSC20650WQ

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650V
Current - Average Rectified (Io) (per Diode):	20A
Voltage - Forward (Vf) (Max) @ If:	1.7V @ 10A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0ns
Current - Reverse Leakage @ Vr:	250µA @ 650V
Operating Temperature - Junction:	175°C (Max)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

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The NXPSC20650WQ is a diodes-rectifier-arrays type power semiconductor that is used in a variety of applications. It is a wide bandgap (WBG) Schottky diode that has an ability to rectify alternating current and reduce the amount of switching losses compared to silicon diodes. This type of diode is suitable for high temperature, high voltage, and high current applications such as solar cell, automotive powertrains, and thyristor applications.The NXPSC20650WQ is based on the Wide Band Gap (WBG) semiconductor technology. The structure of this device is an array of four Schottky diodes connected in series. This type of power semiconductor has a wide bandgap which allow it to handle higher voltage than conventional Silicon diodes. By using an array of Schottky diodes in series, the NXPSC20650WQ can achieve a large current rectification rate with improved power density and efficiency.The NXPSC20650WQ offers a wide temperature range of up to +200°C. This means that the device can be used in applications that require large currents under high temperature conditions. The wide bandgap of the device also allows it to perform well in high-speed switching applications.In addition to its wide temperature range, the NXPSC20650WQ has an optimized reverse recovery time which helps reduce switching time losses. This helps to minimize the system losses associated with switching applications. The NXPSC20650WQ also has an integrated ESD protection, which helps protect the device from damage due to electrostatic discharge.The NXPSC20650WQ is used in automotive powertrains, solar cell, and thyristor applications. In automotive powertrains, it can be used as a rectifier for motor controllers, multi-speed motor controllers and charging systems. In solar cell applications, the NXPSC20650WQ can be used to rectify the energy generated by a solar cell. In thyristor applications, it can be used as a snubber or switch to prevent overcurrents and surge currents.In terms of working principle, the NXPSC20650WQ is based on a rectifier structure. When the power is applied, the Schottky diodes act like a bridge between the two conductors. The current flows through the diode and then the rectified output is obtained. The diode works in such a way that the current can only flow in one direction, allowing the voltage to be effectively rectified before passing through the other conductor.The NXPSC20650WQ is a P-Channel power MOSFET with an integrated current sensing, anti-parallel diode, and protection feature which enable the device to be used in a wide range of applications. This type of power semiconductor can help reduce switching losses and power dissipation as well as offering a wide temperature range and integrated ESD protection. The NXPSC20650WQ can be used in solar cell, automotive powertrains, and thyristor applications for efficient voltage rectification and current protection.

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