NXPSC08650Q Allicdata Electronics
Allicdata Part #:

1740-1222-ND

Manufacturer Part#:

NXPSC08650Q

Price: $ 3.40
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: DIODE SCHOTTKY 650V 8A TO220AC
More Detail: Diode Silicon Carbide Schottky 650V 8A Through Hol...
DataSheet: NXPSC08650Q datasheetNXPSC08650Q Datasheet/PDF
Quantity: 1000
1 +: $ 3.05550
10 +: $ 2.77074
100 +: $ 2.31588
500 +: $ 2.00894
1000 +: $ 1.73376
Stock 1000Can Ship Immediately
$ 3.4
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 230µA @ 650V
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Description

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Diodes are single components used in electrical circuits that can pass current in one direction but not in the opposite direction. Rectifiers form a fundamental element of power supplies. Diodes, particularly rectifiers and single-component diodes, are widely used for power supply applications.

The NXPSC08650Q device is a single-component rectifier diode that offers excellent power rectification performance in electrical systems operating from AC to DC. This device is designed and manufactured using advanced semiconductor technology to provide superior reliability in a variety of electronic applications. It features a low profile package, low power dissipation, and a low forward voltage drop.

NXPSC08650Q Application Field:

  • DC power supply systems.
  • Uninterruptible power systems.
  • High power converters.
  • Power factor correction systems.
  • Power inverters.
  • Motor control applications.
  • Power switching circuits.

NXPSC08650Q Working Principle:

The NXPSC08650Q rectifier diode has a metal-oxide-semiconductor structure. It utilizes one of the metal contacts as the anode and the other as the cathode. When forward voltage is applied, the metal-oxide-semiconductor formed by the metal contacts and semiconductor material converts the applied voltage into an electric current by allowing the electrons to move from the anode to the cathode. This results in a unidirectional flow of electrical current through the device.

When reverse voltage is applied, the electric current flow is blocked due to a thick layer of metal-oxide. This thin layer of metal-oxide acts as a voltage barrier, preventing the current from flowing in the opposite direction. This ensures that power supplies are not affected by reverse voltages in the circuit, leading to smoother and more efficient operation.

In addition, the NXPSC08650Q device features low power dissipation, low forward voltage drop, low leakage current, and high-temperature operation. All these features make the NXPSC08650Q a highly reliable and efficient rectifier in various applications involving power supplies and converters.

The specific data is subject to PDF, and the above content is for reference

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