NXPSC10650BJ Allicdata Electronics
Allicdata Part #:

NXPSC10650BJ-ND

Manufacturer Part#:

NXPSC10650BJ

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: DIODE SCHOTTKY 650V 10A D2PAK
More Detail: Diode Silicon Carbide Schottky 650V 10A Surface Mo...
DataSheet: NXPSC10650BJ datasheetNXPSC10650BJ Datasheet/PDF
Quantity: 1000
4800 +: $ 1.78164
Stock 1000Can Ship Immediately
$ 1.98
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Description

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Introduction: NXPSC10650BJ

NXPSC10650BJ is a single-phase general-purpose power rectifier in a TO-220AB package. It has a maximum RMS forward voltage of 1.5V and a maximum forward surge current of 6.5A. The maximum reverse voltage is 10V and the maximum peak repetitive reverse voltage is 8V. This device is a high current and high temperature operating device that does not require the use of unnecessary external components for operation.

Application Field of the NXPSC10650BJ

NXPSC10650BJ is a perfect choice for applications such as inverters, variable speed drives, and switching power supplies. It is also suitable for high-load energy conversion equipment, such as AC-DC and DC-DC converters. It is designed for use with a wide range of rectification circuits, including bridge rectifiers, full wave rectifiers, center tapped rectifiers and other configurations. The device is also suitable for applications where circuit protection and reverse current blocking are required.

Working Principle of the NXPSC10650BJ

NXPSC10650BJ is an ideal choice for applications where it is necessary to limit the voltage that a circuit sees to safe levels. It is used as a unilateral current barrier in circuits and acts as a switch for controlling the flow of current. This is done by using the phenomenon of the diode\'s depletion region. When the diode\'s anode is forward biased, a potential difference is created across the depletion region of the diode. This potential is strong enough to create an electric field which becomes a barrier for the flow of current from anode to cathode. This means that the current flow is only allowed to flow in the forward direction. When the anode is reverse biased, the electric field created across the depletion region disappears and the diode becomes an open circuit. This prevents current flow in the reverse direction. NXPSC10650BJ is designed to function in both high temperature and high current environments. Its anode is designed to withstand temperatures up to 175°C and its cathode is designed to handle continuous currents up to 5A. Its maximum reverse voltage of 10V ensures safe operation even under extreme conditions. In addition, the device is designed with a maximum forward surge current of 6.5A, ensuring high reliability.In summary, NXPSC10650BJ is an ideal choice for applications which demand high reliability and high temperature operation. Its low forward voltage and high peak surge current make it suitable for a range of applications in inverters, variable speed drives and switching power supplies. It is also optimized for bridge rectification and the prevention of reverse current flow.

The specific data is subject to PDF, and the above content is for reference

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