Allicdata Part #: | 1740-1221-ND |
Manufacturer Part#: |
NXPSC10650Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | WeEn Semiconductors |
Short Description: | DIODE SCHOTTKY 650V 10A TO220AC |
More Detail: | Diode Silicon Carbide Schottky 650V 10A Through Ho... |
DataSheet: | NXPSC10650Q Datasheet/PDF |
Quantity: | 4986 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 10A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 250µA @ 650V |
Capacitance @ Vr, F: | 300pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | 175°C (Max) |
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The NXPSC10650Q diode is a single rectifier that is designed to bridge the gap between commercial and industrial applications. It is specifically designed to deliver high current and low frequency switching, making it an ideal solution for digital power applications such as AC/DC converters, UPS systems, and uninterruptible power supplies. In addition, the NXPSC10650Q works effectively in power factor correction applications, allowing for high efficiency operation and reliable power delivery.
The NXPSC10650Q rectifier offers excellent surge capability with a maximum pulse repetitive current up to 7A and maximum repetitive peak reverse voltage up to 1200V. Its planar technology and optimized electrical design reduce losses and optimize efficiency, while its robust construction ensures long-term reliability in harsh environments.
The NXPSC10650Q rectifier is a very efficient device. It has a low forward voltage drop of only 0.38V at 4A current, and reverse leakage of only 200μA at 25°C and 100V. Additionally, the NXPSC10650Q features reverse recovery time of only 8ns, making it a highly efficient device even in high-frequency switching applications.
The working principle of the device is based on its junction with a PN junction or depletion region. The PN junction or depletion region acts as a built-in diode allowing current flow in one direction only. When the voltage across the PN junction or depletion region is positive, it creates a potential barrier for the opposite current flow. This prevents current from flowing in the opposite direction and protective breakdown due to excess current. Thus, the NXPSC10650Q diode acts as a rectifier allowing the current to flow only in one direction.
The NXPSC10650Q is a versatile device enabling applications in various power supplies, battery chargers, switching power converters, and industrial motor drives. Additionally, its small size, excellent thermal characteristics, and high surge capability make it particularly suitable for automotive and consumer electronics applications.
In conclusion, the NXPSC10650Q rectifier is an excellent solution for a wide range of power applications, including consumer electronics, industrial motor drives, and automotive usage. Its small size, low forward voltage drop, and fast reverse recovery time make it an ideal choice for achieving high efficiency and reliable power delivery.
The specific data is subject to PDF, and the above content is for reference
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