NXPSC10650Q Allicdata Electronics
Allicdata Part #:

1740-1221-ND

Manufacturer Part#:

NXPSC10650Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: DIODE SCHOTTKY 650V 10A TO220AC
More Detail: Diode Silicon Carbide Schottky 650V 10A Through Ho...
DataSheet: NXPSC10650Q datasheetNXPSC10650Q Datasheet/PDF
Quantity: 4986
Stock 4986Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Description

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The NXPSC10650Q diode is a single rectifier that is designed to bridge the gap between commercial and industrial applications. It is specifically designed to deliver high current and low frequency switching, making it an ideal solution for digital power applications such as AC/DC converters, UPS systems, and uninterruptible power supplies. In addition, the NXPSC10650Q works effectively in power factor correction applications, allowing for high efficiency operation and reliable power delivery.

The NXPSC10650Q rectifier offers excellent surge capability with a maximum pulse repetitive current up to 7A and maximum repetitive peak reverse voltage up to 1200V. Its planar technology and optimized electrical design reduce losses and optimize efficiency, while its robust construction ensures long-term reliability in harsh environments.

The NXPSC10650Q rectifier is a very efficient device. It has a low forward voltage drop of only 0.38V at 4A current, and reverse leakage of only 200μA at 25°C and 100V. Additionally, the NXPSC10650Q features reverse recovery time of only 8ns, making it a highly efficient device even in high-frequency switching applications.

The working principle of the device is based on its junction with a PN junction or depletion region. The PN junction or depletion region acts as a built-in diode allowing current flow in one direction only. When the voltage across the PN junction or depletion region is positive, it creates a potential barrier for the opposite current flow. This prevents current from flowing in the opposite direction and protective breakdown due to excess current. Thus, the NXPSC10650Q diode acts as a rectifier allowing the current to flow only in one direction.

The NXPSC10650Q is a versatile device enabling applications in various power supplies, battery chargers, switching power converters, and industrial motor drives. Additionally, its small size, excellent thermal characteristics, and high surge capability make it particularly suitable for automotive and consumer electronics applications.

In conclusion, the NXPSC10650Q rectifier is an excellent solution for a wide range of power applications, including consumer electronics, industrial motor drives, and automotive usage. Its small size, low forward voltage drop, and fast reverse recovery time make it an ideal choice for achieving high efficiency and reliable power delivery.

The specific data is subject to PDF, and the above content is for reference

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