RF101L2STE25 Discrete Semiconductor Products |
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Allicdata Part #: | RF101L2STE25TR-ND |
Manufacturer Part#: |
RF101L2STE25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 200V 1A PMDS |
More Detail: | Diode Standard 200V 1A Surface Mount PMDS |
DataSheet: | RF101L2STE25 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 870mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | PMDS |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | RF101L2S |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are widely used electrical components which are used to separate AC from DC signals in various types of circuits. The rectifiers are a type of diode that convert AC current into DC. The single diodes have a single PN junction, while dual diodes have two PN junctions. The RF101L2STE25 is an example of a single diode rectifier.
The RF101L2STE25 is an ideal diode rectifier for use in a wide range of applications. It is a medium power, 1200V, 25A, single diode with a low forward voltage drop. It is a highly efficient and reliable device, with a soft-recovery feature and low reverse leakage. The device has a maximum reverse recovery time of 5ns, and a maximum reverse current of 100nA. It is suitable for a variety of applications, such as AC/DC converters, DC/DC converters, motor drives and renewable energy systems.
The working principle of the RF101L2STE25 rectifier is based on the PN junction diode. The PN junction diode consists of two layers of semiconductor material, with one layer being P-type and the other being N-type. When the external voltage is applied across the PN junction, the electrons in the P layer move towards the N layer and the holes in the N layer move towards the P layer. This creates a region of depletion in the junction, which is known as the depletion region. When the applied voltage is greater than the PN junction’s forward voltage drop, current starts to flow through the diode. In the case of the RF101L2STE25, this forward voltage drop is 0.62V. As a result, when an AC voltage is applied, the current flows through the diode during one half of the cycle, and is blocked on the other half of the cycle. This results in a DC output.
The RF101L2STE25 single diode rectifier is a highly efficient and reliable device which is suitable for a variety of different applications. It is capable of converting AC current into DC, with a low forward voltage drop, a maximum reverse recovery time of 5ns, and a maximum reverse current of 100nA. The device is also capable of providing reliable performance in a wide range of applications, such as AC/DC converters, DC/DC converters, motor drives, and renewable energy systems. The device’s working principle is based on the PN junction diode, where applied voltage greater than the diode’s forward voltage drop results in current flow through the diode. As a result, an AC voltage is converted into a DC output.
The specific data is subject to PDF, and the above content is for reference
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