RFN10B3STL Discrete Semiconductor Products |
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Allicdata Part #: | RFN10B3STLTR-ND |
Manufacturer Part#: |
RFN10B3STL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 350V 10A CPD |
More Detail: | Diode Standard 350V 10A Surface Mount CPD |
DataSheet: | RFN10B3STL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 350V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 350V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPD |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | RFN10B3S |
Description
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RFN10B3STL is a single rectifier diode belonging to the RF series. This diode is best suited for high frequency applications and is mainly used in power supply circuits, such as DC–DC converters, inverters, and motor switching applications where operating temperature range is between -65°C and 175°C. The device is robust and has low forward voltage drop, which helps in achieving high power rating.
Features
- Forward Current at 175°C is 3.0 A
- Reverse Voltage is 1000 V
- Repetitive Peak Forward Surge Current is 15 A
- Avalanche current is 480 mA
- Operating Temperature Range is -65°C to 175°C
Construction
RFN10B3STL is a pin compatible, terminal equipped single rectifying diode which is mainly used in high frequency applications. The diode consists of a single terminal N-type layer. Its body consists of glass passivated double-sided rectifiers. Each side of the terminal consists of a single layer of p-type semiconductor material. To improve the forward and reverse voltage ratings, metalized epoxy over-molded packages are typically used for RFN10B3STL.Working Principle and Application Field
The working principle of RFN10B3STL diode is based on the PN junction formed between the n-type layer and the p-type layers. The n-type layer is a semiconductor material which has electrons as its majority carrier and the p-type layer is a semiconductor material which has holes as its majority carrier. The junction between the two layers creates a depletion region around the semiconductor junction. When a forward bias is applied, the holes and electrons combine at the contact and the current flows due to momentum transfer. In reverse bias, no current flows.RFN10B3STL diode is mainly used in equipment such as DC-DC converters, inverters, motor switching, etc. It can be used in low to moderate power circuits because of its high surge current rating. Furthermore, it can be used in high frequency applications, with capacitance and inductance components connected in the circuit. The diode is also ideal for applications in high temperature environments because of its wide operating temperature range.Advantages
- Low forward voltage drop
- Robust construction
- High current handling capacity
- Excellent operating temperature range
- Low noise and low power loss
Disadvantages
- High Reverse leakage current
- High forward current needed for Switching
The specific data is subject to PDF, and the above content is for reference
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