RFN10B3STL Allicdata Electronics

RFN10B3STL Discrete Semiconductor Products

Allicdata Part #:

RFN10B3STLTR-ND

Manufacturer Part#:

RFN10B3STL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE GEN PURP 350V 10A CPD
More Detail: Diode Standard 350V 10A Surface Mount CPD
DataSheet: RFN10B3STL datasheetRFN10B3STL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 350V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 350V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Base Part Number: RFN10B3S
Description

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RFN10B3STL is a single rectifier diode belonging to the RF series. This diode is best suited for high frequency applications and is mainly used in power supply circuits, such as DC–DC converters, inverters, and motor switching applications where operating temperature range is between -65°C and 175°C. The device is robust and has low forward voltage drop, which helps in achieving high power rating.

Features

  • Forward Current at 175°C is 3.0 A
  • Reverse Voltage is 1000 V
  • Repetitive Peak Forward Surge Current is 15 A
  • Avalanche current is 480 mA
  • Operating Temperature Range is -65°C to 175°C

Construction

RFN10B3STL is a pin compatible, terminal equipped single rectifying diode which is mainly used in high frequency applications. The diode consists of a single terminal N-type layer. Its body consists of glass passivated double-sided rectifiers. Each side of the terminal consists of a single layer of p-type semiconductor material. To improve the forward and reverse voltage ratings, metalized epoxy over-molded packages are typically used for RFN10B3STL.

Working Principle and Application Field

The working principle of RFN10B3STL diode is based on the PN junction formed between the n-type layer and the p-type layers. The n-type layer is a semiconductor material which has electrons as its majority carrier and the p-type layer is a semiconductor material which has holes as its majority carrier. The junction between the two layers creates a depletion region around the semiconductor junction. When a forward bias is applied, the holes and electrons combine at the contact and the current flows due to momentum transfer. In reverse bias, no current flows.RFN10B3STL diode is mainly used in equipment such as DC-DC converters, inverters, motor switching, etc. It can be used in low to moderate power circuits because of its high surge current rating. Furthermore, it can be used in high frequency applications, with capacitance and inductance components connected in the circuit. The diode is also ideal for applications in high temperature environments because of its wide operating temperature range.

Advantages

  • Low forward voltage drop
  • Robust construction
  • High current handling capacity
  • Excellent operating temperature range
  • Low noise and low power loss

Disadvantages

  • High Reverse leakage current
  • High forward current needed for Switching
RFN10B3STL Rectifier Diode is a high frequency diode suitable for power supply circuits and motor switching applications. Its wide operating temperature range, robust construction and low forward voltage drop makes it suitable for high temperature environments. It is a cost effective solution for applications in high temperature environments.

The specific data is subject to PDF, and the above content is for reference

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