Allicdata Part #: | RFN20NS6STL-ND |
Manufacturer Part#: |
RFN20NS6STL |
Price: | $ 0.66 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 600V 20A LPDS |
More Detail: | Diode Standard 600V 20A Surface Mount LPDS |
DataSheet: | RFN20NS6STL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.59286 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.55V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 60ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPDS |
Operating Temperature - Junction: | 150°C (Max) |
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RFN20NS6STL Application Field and Working Principle
The RFN20NS6STL is an N-channel enhancement-mode silicon-gate power field-effect transistor. According to its datasheet, it is particularly designed for high current applications, such as in audio amplifiers, LCD displays, solar cells and battery-driven products. Generally, it is used in the output stages of switching power supplies, brushless DC motor control, and high-power audio amplifiers.
Basic Working Principle
The working principle of the RFN20NS6STL is the same as that of the other N-channel enhancement-mode power field-effect transistors. It is composed of three basic layers: a gate layer, a source layer, and a drain layer. When a small DC voltage is applied to the gate, an electric field is generated between the source and the drain, which results in the current flowing through the channel between the two layers. This process is known as junction field-effect transistor (JFET) action.
The source and drain are embedded inside the channel, where electrons and holes generate a depletion region. The electrons move through the channel and accumulate at the drain, while the holes accumulate at the source. This reverse-biased depletion region prevents the leakage current through the channel.
Application Field and Working Principle
The RFN20NS6STL is mainly used in power supplies, high power motors, and audio amplifiers. When used in power supplies, the gate serves as the gate of the switch, and it is connected to the control circuit for power on and off control. When used in high power motors and audio amplifiers, the gate serves as the control port and is connected to the control circuit for controlling the on/off state and the strength of the circuit. Depending on the requirement, the control voltage applied to the gate terminal is different.
Since the RFN20NS6STL can switch high current and voltage, it can be used in many of the same applications as a regular MOSFET (metal-oxide-semiconductor field-effect transistor). The RFN20NS6STL is a low-on-resistance device and offers superior performance over the MOSFET in high-current applications. It not only ensures low losses but also increases performance and efficiency.
Advantages of the RFN20NS6STL
The RFN20NS6STL offers a number of advantages over MOSFETs. It has a lower on-resistance than a MOSFET, which means that it requires less voltage and power to operate. It also has a low gate charge, which lowers switching losses. Additionally, it has very low gate-drain capacitance, which reduces switching noise and reduces the power supply size requirements.
The RFN20NS6STL also features improved temperature stability, compared to the MOSFET. It has a high maximum operating temperature of 150°C, which makes it suitable for many high-temperature applications. Moreover, with a high avalanche breakdown voltage, it can operate in higher voltages without damaging itself.
The specific data is subject to PDF, and the above content is for reference
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