RFN20NS6STL Allicdata Electronics
Allicdata Part #:

RFN20NS6STL-ND

Manufacturer Part#:

RFN20NS6STL

Price: $ 0.66
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE GEN PURP 600V 20A LPDS
More Detail: Diode Standard 600V 20A Surface Mount LPDS
DataSheet: RFN20NS6STL datasheetRFN20NS6STL Datasheet/PDF
Quantity: 1000
1000 +: $ 0.59286
Stock 1000Can Ship Immediately
$ 0.66
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RFN20NS6STL Application Field and Working Principle

The RFN20NS6STL is an N-channel enhancement-mode silicon-gate power field-effect transistor. According to its datasheet, it is particularly designed for high current applications, such as in audio amplifiers, LCD displays, solar cells and battery-driven products. Generally, it is used in the output stages of switching power supplies, brushless DC motor control, and high-power audio amplifiers.

Basic Working Principle

The working principle of the RFN20NS6STL is the same as that of the other N-channel enhancement-mode power field-effect transistors. It is composed of three basic layers: a gate layer, a source layer, and a drain layer. When a small DC voltage is applied to the gate, an electric field is generated between the source and the drain, which results in the current flowing through the channel between the two layers. This process is known as junction field-effect transistor (JFET) action.

The source and drain are embedded inside the channel, where electrons and holes generate a depletion region. The electrons move through the channel and accumulate at the drain, while the holes accumulate at the source. This reverse-biased depletion region prevents the leakage current through the channel.

Application Field and Working Principle

The RFN20NS6STL is mainly used in power supplies, high power motors, and audio amplifiers. When used in power supplies, the gate serves as the gate of the switch, and it is connected to the control circuit for power on and off control. When used in high power motors and audio amplifiers, the gate serves as the control port and is connected to the control circuit for controlling the on/off state and the strength of the circuit. Depending on the requirement, the control voltage applied to the gate terminal is different.

Since the RFN20NS6STL can switch high current and voltage, it can be used in many of the same applications as a regular MOSFET (metal-oxide-semiconductor field-effect transistor). The RFN20NS6STL is a low-on-resistance device and offers superior performance over the MOSFET in high-current applications. It not only ensures low losses but also increases performance and efficiency.

Advantages of the RFN20NS6STL

The RFN20NS6STL offers a number of advantages over MOSFETs. It has a lower on-resistance than a MOSFET, which means that it requires less voltage and power to operate. It also has a low gate charge, which lowers switching losses. Additionally, it has very low gate-drain capacitance, which reduces switching noise and reduces the power supply size requirements.

The RFN20NS6STL also features improved temperature stability, compared to the MOSFET. It has a high maximum operating temperature of 150°C, which makes it suitable for many high-temperature applications. Moreover, with a high avalanche breakdown voltage, it can operate in higher voltages without damaging itself.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RFN2" Included word is 11
Part Number Manufacturer Price Quantity Description
RFN2LAM6STR ROHM Semicon... -- 1000 DIODE GEN PURP 600V 1.5A ...
RFN20TJ6SGC9 ROHM Semicon... 1.23 $ 1970 DIODE GEN PURP 600V 20A T...
RFN20TF6SFH ROHM Semicon... 1.79 $ 1168 DIODE GEN PURP 600V 20A T...
RFN2LAM4STR ROHM Semicon... 0.13 $ 1000 DIODE GEN PURP 400V 1.5A ...
RFN2L6STE25 ROHM Semicon... -- 1000 DIODE GEN PURP 600V 1.5A ...
RFN2L4STE25 ROHM Semicon... 0.21 $ 1000 DIODE SCHOTTKY 400V 1.5A ...
RFN20TF6S ROHM Semicon... -- 1000 DIODE GEN PURP 600V 20A T...
RFN20NS6STL ROHM Semicon... 0.66 $ 1000 DIODE GEN PURP 600V 20A L...
RFN20NS4SFHTL ROHM Semicon... 0.38 $ 1000 FAST RECOVERY DIODE (AEC-...
RFN20NS3SFHTL ROHM Semicon... 0.42 $ 1000 FAST RECOVERY DIODES (COR...
RFN20NS6SFHTL ROHM Semicon... 0.44 $ 1000 FAST RECOVERY DIODES (COR...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics