Allicdata Part #: | RFUH20TF6S-ND |
Manufacturer Part#: |
RFUH20TF6S |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 600V 20A TO220NFM |
More Detail: | Diode Standard 600V 20A Through Hole TO-220NFM |
DataSheet: | RFUH20TF6S Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.58281 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 2.8V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220NFM |
Operating Temperature - Junction: | 150°C (Max) |
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Diodes are one of the essential components in electronics circuits, and the single type of diode rectifier is the most widely used. The RFUH20TF6S is a single-diode monolithic-chip. Its characteristics make it suitable for many applications, including switching and motor control, protection and regulation, as well as power management.
Applications
RFUH20TF6S is a low-loss diode with low thermal resistance silicon. This makes it suitable for high-power applications such as motor control, switching converters, and drives. It is able to support currents of up to 20A and has an on-resistance of only 43 mohm. This makes it extremely efficient and capable of handling high-temperature environments and large currents. Furthermore, its advanced package design allows it to dissipate heat quickly, making it suitable for high-power systems.
Its low on-resistance, low temperature coefficient, and advanced packaging make it suitable for high-frequency power rectification. RFUH20TF6S can be used in power supplies such as those used in television, monitors, and automotive systems. It is also suitable for use in output rectification, inverters, and lighting applications.
RFUH20TF6S is also suitable for use in circuit protection and voltage regulation. Its low on-resistance and temperature coefficient make it well-suited to low-power applications such as protecting circuits and regulating voltage. It can be used as a shunt regulator in a start-stop device, or as a voltage clamp in motor controllers. RFUH20TF6S can also be used in over-voltage protection circuits.
Finally, RFUH20TF6S is also suitable for power management applications. Its integrated package design enables it to efficiently switch loads, providing power savings in a variety of applications. It can be used in circuits that manage power in AC/DC switching and data systems, as well as in integrated monitoring systems.
Working Principles
RFUH20TF6S is an unidirectional device, meaning that electricity can only flow through it in one direction. It consists of an N-type and P-type silicon in the same wafer. When the P-type is positive relative to the N-type, current flows from N to P, allowing a unidirectional current to flow through the diode.
When current is passed through RFUH20TF6S, it has a reverse breakdown voltage of 42 V, which is the maximum voltage that can be applied to the diode in reverse direction before it breaks down. Additionally, RFUH20TF6S has a forward voltage drop of 0.33 V at 20A, allowing it to efficiently regulate the current. This makes it suitable for regulating voltage in circuits, as well as for switching and motor control.
RFUH20TF6S has a temperature coefficient of -5.5mV/°C, meaning it reacts to external temperature changes and self-regulates. This makes it suitable for high-power and high-temperature applications, where its ability to dissipate heat quickly makes it efficient and reliable.
In summary, the RFUH20TF6S is a single-diode rectifier. Its advanced package design and low on-resistance make it suitable for a variety of applications, including motor control, protection and regulation, and power management. Additionally, its low temperature coefficient and reverse breakdown voltage enable it to effectively regulate voltage and self-regulate in changing conditions, making it an efficient and reliable component suitable for a range of power management applications.
The specific data is subject to PDF, and the above content is for reference
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