BA679S-GS08 Discrete Semiconductor Products |
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Allicdata Part #: | BA679S-GS08GITR-ND |
Manufacturer Part#: |
BA679S-GS08 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE PIN 30V SOD80 MINIMELF |
More Detail: | RF Diode PIN - Single 30V 50mA SOD-80 MiniMELF |
DataSheet: | BA679S-GS08 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.07848 |
5000 +: | $ 0.07372 |
12500 +: | $ 0.06897 |
25000 +: | $ 0.06342 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.5pF @ 0V, 100MHz |
Resistance @ If, F: | 50 Ohm @ 1.5mA, 100MHz |
Operating Temperature: | 125°C (TJ) |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 MiniMELF |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BA679S-GS08 is an RF diode that serves a variety of applications in various fields. This diode is used in the ubiquitous communications sector, where RF signals are used to enable communication over long distances. In the enterprise industry, RF diodes are used in data centers, wireless access points, and a variety of other applications. The BA679S-GS08 is also widely used in medical equipment and devices, where it helps enable high-quality imaging. Additionally, the diode is used in the automotive industry for noise suppression, filtering, and signal conversion.
The BA679S-GS08 diode features a central GaAs npn transistor and an RF bypass capacitor in its basic configuration. The transistor provides a low-level conductance, while the capacitor provides a low-level impedance, which combines to create an effective barrier against interference. The diode is capable of handling signals up to 5GHz, making it well suited for a variety of applications requiring rapid and reliable signal transmission.
The BA679S-GS08 diode is capable of efficiently converting electronic signals into RF signals and vice versa. This bi-directional conversion is achieved by using a blocking diode connected to the base of the transistor. The blocking diode allows for both AC and DC currents to pass between the transistor and the external circuit. The current then flows from the external circuit and through the transistor, converting the non-RF signal into a high-frequency RF signal.
The BA679S-GS08 diode also offers an adjustable current, which makes it ideal for applications requiring variable RF signal strength. To adjust the current, the user simply adjusts the amount of voltage applied to the diode. This flexible feature makes the diode especially useful in applications with demanding RF requirements. Additionally, the diode is capable of providing stable, high-frequency signals even in extreme environmental conditions.
In summary, the BA679S-GS08 diode is a highly reliable and versatile part that is suitable for a variety of applications in various industries. Through its unique combination of features, the diode is capable of providing clean, stable and efficient RF signals. Moreover, its adjustable current makes it a great option for applications requiring variable RF signal strength, while its high-frequency capabilities make it an ideal choice for rapid and reliable signal transmission.
The specific data is subject to PDF, and the above content is for reference
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