HMPP-3860-TR1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HMPP-3860-TR1 is an RF diode, used for a variety of purposes. This diode is a three-terminal device with a p+/n+ source termination, a p+ gate connection, and an n+ drain connection. This diode can be used in applications such as HPA switches, Bias Tee, high power detectors, short delay lines, power outlets cables, and other RF applications.

The HMPP-3860-TR1 utilizes aluminum as the material for its construction. It is also equipped with an isolation layer, which helps maintain its stability. This diode has anode to cathode current rating up to 100mA, with no reverse bias. It also features a maximum junction temperature of 175°C.

In terms of its functioning, the HMPP-3860-TR1 is a low-saturation current device and is suitable for applications that require a quick switching action. It is also capable of handling a large amount of power, and its level of performance is relatively consistent. Additionally, it has a long life-span and is resistant to damage from electro-magnetic interference (EMI).

The HMPP-3860-TR11 is primarily used in RF-related applications. It is suitable for use in radio frequency (RF) or radio frequency energy transfer (RFET) applications. It can be used as a switch in high-powered amplifiers (HPA), and as a receiver or transmitter in communications networks. It can also be used as an antenna switch and as an oscillator in electronic circuits. Additionally, it can be used in high-power detectors, short delay lines, power outlets cables, and more.

In terms of its working principle, the HMPP-3860-TR1 works as follows. The current passing through the device is adjusted based on the voltage of the applied gate voltage. A higher gate voltage causes current to pass more easily through the device, resulting in higher anode-to-cathode current flow. This current voltage relationship is known as the "current gain" of the device.

In addition, the device also exhibits a "self-inhibited" state, in which it will not pass any current until the gate voltage applied is above a certain threshold level. This prevents current from flowing through the device when it is not desired. Additionally, the device also has an inherent voltage protection feature, which helps to reduce the chances of damage due to excessive applied voltages.

Overall, the HMPP-3860-TR1 is a highly-versatile RF diode, capable of handling a wide range of applications, including those in the HPA and communication networks. Its ability to handle high power while also providing controlled current gain makes it an ideal choice for many RF projects. Its long life and EMI resistance are also beneficial features. Together, these features make it a great choice for RF-related applications.

The specific data is subject to PDF, and the above content is for reference