Allicdata Part #: | 1465-1033-ND |
Manufacturer Part#: |
MA4L022-186 |
Price: | $ 17.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | PIN B0NDED SL ODS186 |
More Detail: | RF Diode PIN - Single 35V 100mA Chip |
DataSheet: | MA4L022-186 Datasheet/PDF |
Quantity: | 90 |
1 +: | $ 15.81300 |
10 +: | $ 14.62730 |
25 +: | $ 13.44120 |
100 +: | $ 12.49230 |
250 +: | $ 11.46450 |
500 +: | $ 10.91100 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 35V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | -- |
Resistance @ If, F: | 2 Ohm @ 10mA, 500MHz |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Package / Case: | Die |
Supplier Device Package: | Chip |
Description
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The MA4L022-186 is a Distributed Feedback (DFB) laser diode. It is used in a variety of applications, especially those in the radio frequency (RF) range. In order for the device to work, its internal components must be properly configured and aligned. This article will discuss the application field and working principle of the MA4L022-186.
Application Field of MA4L022-186
The MA4L022-186 is a DFB laser diode designed for use in RF applications. It is suitable for use in a variety of RF transmitter applications, including CDMA, PCS and WCDMA systems. It is also suitable for use in other wireless communication systems, such as 802.11. The MA4L022-186 is also used in high power applications, such as fiber lasers.Working Principle of MA4L022-186
The MA4L022-186 consists of two sections, an active region and a passive region. The active region consists of two intracavity layers (ICLs) of indium gallium arsenide (InGaAs). These layers are positioned in the exact same plane and overlap each other. This allows the device to produce a single frequency laser source.The ICLs are sandwiched between two Bragg reflector regions, which contain many layers of dielectric material. These reflector regions reflect the laser beam generated by the ICLs, creating the output optical power of the device.The passive region consists of a quantum well structure, which consists of a quantum well layer and a high-reflection coating. This structure serves to reduce the threshold current for lasing and provide large modulation bandwidth.The MA4L022-186 works by generating a single frequency laser beam, which is reflected by the Bragg reflectors and output from the device. The device can be modulated in order to change the output power and frequency of the laser beam.Conclusion
The MA4L022-186 is a Distributed Feedback (DFB) laser diode designed for use in RF applications. Its internal components are properly configured and aligned in order to produce a single frequency laser source. The device is suitable for use in a variety of applications, especially those in the radio frequency (RF) range. The MA4L022-186 also works by generating a single frequency laser beam, which is reflected by the Bragg reflectors and output from the device.The specific data is subject to PDF, and the above content is for reference
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