BFR93AE6327HTSA1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	6GHz
Noise Figure (dB Typ @ f):	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain:	9.5dB ~ 14.5dB
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 30mA, 8V
Current - Collector (Ic) (Max):	90mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BFR93

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Introduction
The RF transistor BFR93AE6327HTSA1 is a NPN silicon transistor designed for operation in a wide range of UHF/VHF frequencies. It is manufactured by Infineon Technologies and is a robust, reliable, long life device available in both die form and through-hole packages. The complete device consists of four terminals, with three of them (B,E,C) forming the active common-emitter element and the fourth terminal (G) simply being connected to the case (or collector pin).

Application
The BFR93AE6327HTSA1 is most suitable for UHF and VHF circuits due to its wide frequency range and reliable performance. This device is especially unique in its ability to operate over temperature ranges of -55°C to +175°C, making it ideal for applications in harsh environments such as automotive, aerospace, and military systems. The high gain, low noise, and low-voltage operation of the BFR93AE6327HTSA1 make it ideal for use in amplifier circuits, related oscillator/mixer stages, or in battery-powered FM transmitters or receivers.

Working Principle
The BFR93AE6327HTSA1 is a NPN RF transistor and, as such, its operation is based on the operation of an NPN silicon transistor. The BFR93AE6327HTSA1 consists of a mechanically isolated base region, an emotionally isolated collector region, and an emotionally isolated emitter region. The device operates in the active region of its gain curve. Current flows from collector to emitter when a gate voltage is applied to the base terminal. This gate voltage is the main factor that determines the collector emitter current and therefore the output of the device. The collector voltage is determined by the applied voltage, load impedance, and the amount of collector current flowing.

Conclusion
The BFR93AE6327HTSA1 is an NPN silicon transistor designed for operation in a wide range of UHF/VHF frequencies. It is most suitable for UHF and VHF circuits due to its wide frequency range and reliable performance. The high gain, low noise, and low-voltage operation of the BFR93AE6327HTSA1 make it ideal for use in amplifier circuits, related oscillator/mixer stages, or in battery-powered FM transmitters or receivers. The device operates in the active region of its gain curve by allowing current to flow from collector to emitter when a voltage is applied to the base terminal.

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