MRF422 Allicdata Electronics
Allicdata Part #:

1465-1185-ND

Manufacturer Part#:

MRF422

Price: $ 56.90
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: TRANS RF NPN 35V 20A 211-11
More Detail: RF Transistor NPN 35V 20A 150W Chassis Mount 211-...
DataSheet: MRF422 datasheetMRF422 Datasheet/PDF
Quantity: 34
1 +: $ 51.72300
10 +: $ 48.48790
25 +: $ 46.22510
100 +: $ 43.63920
Stock 34Can Ship Immediately
$ 56.9
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: --
Noise Figure (dB Typ @ f): --
Gain: 13dB
Power - Max: 150W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2
Description

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The MRF422 is a high-frequency complementary bipolar NPN/PNP transistor made by Motorola. It is designed for reliable, high-gain, high-frequency broadband amp; switching applications in the VHF and UHF frequency bands. These transistors are primarily used for short-range wireless applications, such as wireless keyboards, remote controls and other low-power RF applications. The MRF422 is designed to be used in Class-AB and Push-Pull configurations and is particularly suited for linear amplifier designs. The high operating speeds of these devices allow them to be used in applications where high power is being amplified.

Application field of MRF422

The MRF422 is a versatile transistor suitable for use in a variety of applications. This device is capable of high-gain amplifiers, linear amplifiers, and high-speed switching designs. It is ideally suited for VHF and UHF amplifiers and linear amplifiers, such as low-noise amplifiers, power amplifiers, and RF linear amplifiers. This device can be used in amplifiers and switching circuits operating in the VHF and UHF bands, from 30 MHz to 1000 MHz. The device also offers excellent frequency response and stability. It is suitable for narrowband applications, such as citizen\'s band radios, or wideband applications, such as television tuners.

The MRF422 can also be used in oscillators, filters, and frequency synthesizers. The good thermal stability of the device ensures its long-term stability and performance when used in such applications. The device can also be used in other RF applications, such as RFIDs, cellphones, and short-range wireless systems.

Working principle of MRF422

The MRF422 is a bipolar NPN/PNP transistor. It consists of an emitter, a collector, and a base. The emitter supplies the electrons and the collector collects them. The base controls the current flow between the emitter and the collector. The collector current is controlled by the base current, which is a function of the voltage applied to the base.

The MRF422 can be used in Class-AB or Push-Pull configurations. In Class-AB configurations, the device is used to amplify an incoming signal to produce an amplified output. In this configuration, the base current is varied to control the collector current. When a signal is applied to the device, the collector current is adjusted to follow the signal and amplify it. In Push-Pull configurations, the device is used to switch on and off an RF carrier signal. In this configuration, the base current is used to switch off the collector current and effectively shut off the RF carrier.

The MRF422 is designed to operate at high frequencies and high collector current levels. It is designed to minimize the effects of thermal runaway and current leakage when used in Class-AB and Push-Pull configurations. It also has excellent frequency and gain stability. This ensures that the transistor will not suffer from and degrade over time.

In summary, the MRF422 is a versatile, high-frequency complementary bipolar NPN/PNP transistor. It is suitable for use in VHF, UHF, and microwave amplifiers and switching circuits. It can also be used in high-speed RFID systems, filters and oscillators. The device is designed to operate reliably at high collector currents and high frequencies, making it a good choice for many RF applications.

The specific data is subject to PDF, and the above content is for reference

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