DTC114YCAHZGT116 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max):	100mA
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	250MHz
Power - Max:	350mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SST3

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Introduction to DTC114YCAHZGT116 Transistor

The DTC114YCAHZGT116 is a single, pre-biased bipolar transistors (BJT) manufactured by Toshiba® for analog and digital applications. The suffix indicates the special features of the product. The device has been designed with a built-in emitter resistors and bias generator, which helps it become suitable for use in low-power analog, logic and digital circuits. This makes it a versatile device that can be used in modules, circuits, and systems.

Application Fields of DTC114YCAHZGT116

The DTC114YCAHZGT116 transitor is used in applications such as power management, signal processing, switch mode power supplies, communication interface controllers, motor control, class D amplifiers, voltage regulators, data converters, line drivers, WiFi and Bluetooth, and low power designs. It is ideal for use in portable devices, such as laptop and mobile phones, due to its low power consumption and efficiency. The device can be used in a variety of configurations, such as single transistors, dual transistors and even up to a maximum of four transistors to achieve the desired functionality.

Working Principle of DTC114YCAHZGT116

The DTC114YCAHZGT116 is a pre-biased transistor, which means that its bias is generated by the built-in emitter resistors and bias generator. This ensures a stable bias voltage, making it ideal for low-power analog and digital circuits. The device operates on the principle of the collector-emitter voltage drops, which is regulated by the base current. The collector current is controlled by varying the base current, and the emitter current is controlled by the collector current. The base-emitter voltage (Vbe) is low, resulting in low-power operation and improved efficiency. The minimum on-state voltage (Von) of the device is 0.2V, which allows for better efficiency. Additionally, the device has a high switching speed and a low saturation voltage, making it suitable for use in high-speed digital switching applications. The maximum voltage (Vmax) of the device is 40V, making it suitable for use in a wide range of applications.

Conclusion

The DTC114YCAHZGT116 is a single, pre-biased bipolar transistors manufactured by Toshiba® for analog and digital applications. The device has been designed with a built-in emitter resistors and bias generator, which helps it become suitable for use in low-power analog, logic and digital circuits. This makes it a versatile device that can be used in modules, circuits, and systems. The device operates on the principle of the collector-emitter voltage drops, which is regulated by the base current. The DTC114YCAHZGT116 is used in applications such as power management, signal processing, switch mode power supplies, communication interface controllers, motor control, class D amplifiers, voltage regulators, data converters, line drivers, WiFi and Bluetooth, and low power designs.

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